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STM32H533CE датащи(PDF) 131 Page - STMicroelectronics |
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STM32H533CE датащи(HTML) 131 Page - STMicroelectronics |
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131 / 231 page ![]() DS14539 Rev 1 131/231 STM32H533xx Electrical characteristics 200 Table 57. I/O static characteristics(1) Symbol Parameter Condition Min Typ Max Unit VIL I/O input low level voltage except BOOT0 1.08 V < VDD < 3.6 V - - 0.3 VDDIOx(2) V I/O input low level voltage except BOOT0 - - 0.4 VDDIOx - 0.1(3) BOOT0 I/O input low level voltage -- 0.19 VDDIOx + 0.1(3) VIH I/O input high level voltage except BOOT0 1.08 V < VDD < 3.6 V 0.7 VDDIOx(2) -- V I/O input high level voltage except BOOT0 0.52 VDDIOx + 0.18(3) -- BOOT0 I/O input high level voltage 0.17 VDDIOx + 0.6(3) -- VHYS(3) TT_xx, FT_xxx and NRST I/O input hysteresis 1.08 V < VDD < 3.6 V - 250 - mV BOOT0 I/O input hysteresis 1.71 V < VDD < 3.6 V - 200 - Ileak(4) FT_xx Input leakage current(3) 0 < VIN ≤ Max(VDDXXX)(7) -- ±200 nA Max(VDDXXX) < VIN ≤ Max(VDDXXX)+ 1 V) (5)(7) - - 2500 Max(VDDXXX) < VIN ≤ 5.5 V (5)(7) -- 750 TT_xx Input leakage current 0< VIN ≤ Max(VDDXXX) (7) -- ±200 BOOT0 0< VIN ≤ VDDOX -- 15 RPU Weak pull-up equivalent resistor(6) VIN = VSS 30 40 50 kΩ RPD Weak pull-down equivalent resistor(6) VIN = VDD(7) 30 40 50 CIO I/O pin capacitance - - 5 - pF 1. VDDIOx represents VDD or VDDIO2. 2. Compliant with CMOS requirements. 3. Specified by design - Not tested in production. 4. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following formula: ITotal_Ieak_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max). 5. VIN must be lower than Max(VDDXXX) + 3.6 V. 6. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10%). 7. Max(VDDXXX) is the maximum value of all the I/O supplies. |
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