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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32H533CE датащи(PDF) 126 Page - STMicroelectronics |
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STM32H533CE датащи(HTML) 126 Page - STMicroelectronics |
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126 / 231 page  Electrical characteristics STM32H533xx 126/231 DS14539 Rev 1 5.3.10 Memory characteristics Flash memory The characteristics are given at TJ = -40 to 130 °C unless otherwise specified. The devices are shipped to customers with the flash memory erased. Table 48. PLL characteristics (medium VCO frequency range) Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit fPLL_IN PLL input clock - 1 - 2 MHz PLL input clock duty cycle - 10 - 90 % fPLL_OUT PLL multiplier output clock P, Q, R VOS0 1.17 - 210 MHz VOS1 1.17 - 210 VOS2 1.17 - 160(2) VOS3 1.17 - 88(2) fVCO_OUT PLL VCO output - 150 - 420 tLOCK PLL lock time Normal mode - 45 80(3) μs Sigma-delta mode Forbidden Jitter Cycle-to-cycle jitter fVCO_OUT = 150 MHz - - 60 - ±ps fVCO_OUT = 200 MHz - - 40 - fVCO_OUT = 400 MHz - - 18 - fVCO_OUT = 420 MHz - - 15 - Period jitter fVCO_OUT = 150 MHz fPLL_OUT = 50 MHz -75 - fVCO_OUT = 400 MHz - 25 - Long term jitter Normal mode fVCO_OUT = 400 MHz - ±0.2 - % IDD(PLL) PLL power consumption on VDD fVCO_OUT = 420 MHz VDD - 275 360 μA VCORE -450 - fVCO_OUT = 150 MHz VDD - 160 240 VCORE -165 - 1. Specified by design - Not tested in production, unless otherwise specified. 2. This value must be limited to the maximum frequency due to the product limitation. 3. Evaluated by characterization - Not tested in production. Table 49. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Specified by design - Not tested in production Unit IDD Supply current Word program(2) -2.5 3.6 mA Sector erase - 1.8 4 Mass erase - 2.0 4 |
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