| поискавой системы для электроныых деталей |
|
STM32H533CE датащи(PDF) 20 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32H533CE датащи(HTML) 20 Page - STMicroelectronics |
|
20 / 231 page ![]() Functional overview STM32H533xx 20/231 DS14539 Rev 1 • Supported cache accesses: – supports both write-back and write-through policies (selectable with AHB bufferable attribute) – read and write-back always allocated – write-through always non-allocated (write-around) – supports byte, half-word and word writes • TrustZone security support • Maintenance operations for software management of cache coherency: – full cache invalidation (non interruptible) – address range clean and/or invalidate operations (background task, interruptible) • Error management: detection of error for master port request initiated by DCACHE (line eviction or clean operation), with optional interrupt raising 3.3 Memory protection unit The memory protection unit (MPU) is used to manage the CPU accesses to the memory and to prevent one task to accidentally corrupt the memory or the resources used by other active tasks. This memory area is organized into up to 20 protected areas (12 secure and 8 non-secure). The MPU regions and registers are banked across secure and non-secure states. The MPU is especially helpful for applications where critical or certified code must be protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-time operating system). If a program accesses a memory location prohibited by the MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can dynamically update the MPU area setting based on the process to be executed. 3.4 Embedded flash memory The devices feature 512 Kbytes of embedded flash memory for storing programs and data. The flash memory supports high-cycle data area of up to 100 K cycles. The flash memory interface features: • dual-bank operating modes • read-while-write (RWW) This allows a read operation to be performed from one bank while an erase or program operation is performed to the other bank. Each bank contains 32 pages of 8 Kbytes. The flash memory embeds a 2-Kbyte OTP (one-time programmable) for user data, and up to 96 Kbytes supporting high cycling capability (100 K cycles), to be used for data (EEPROM emulation). |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |