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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PC87413 датащи(PDF) 236 Page - National Semiconductor (TI) |
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PC87413 датащи(HTML) 236 Page - National Semiconductor (TI) |
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236 / 257 page  11.0 Device Characteristics (Continued) www.national.com 236 Revision1.2 11.3 INTERNAL RESISTORS DC Test Conditions Figure 54. Internal Resistor Test Conditions, TA =0 °Cto70 °C, VSUP = 3.3V Figure 55. Internal Pull-Down Resistor for Straps, TA =0 °Cto70 °C, VSUP = 3.3V Notes for Figures 54 and 55: 1. VSUP is VDD or VSB according to the pin power well. 1. The equivalent resistance of the pull-up resistor is calculated by RPU = (VSUP − VPIN) / IPU. 2. The equivalent resistance of the pull-down resistor is calculated by RPD = VPIN / IPD. 3. The external pull-up resistor is 4.7K Ω for the TRIS strap. Device Under Test RPU Pull-Up Resistor Test Circuit Pull-Down Resistor Test Circuit VSUP Pin A IPU V VPIN Device Under Test RPD VSUP Pin A IPD V VPIN VSUP Pull-Down Resistor for Straps Device Under Test RPD VSUP Pin A IPD V VPIN VSUP Device Under Test RPD VSUP Pin A IPD V VPIN VSUP 10 µA VPIN < VIL VPIN > VIH 10 µA 10K Ω (Note 3) |
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