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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IMX6SDLCEC датащи(PDF) 43 Page - NXP Semiconductors |
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IMX6SDLCEC датащи(HTML) 43 Page - NXP Semiconductors |
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43 / 169 page  Electrical Characteristics i.MX 6Solo/6DualLite Applications Processors for Consumer Products, Rev. 9, 11/2018 NXP Semiconductors 43 Table 26. RGMII I/O 1.8V and 2.5V mode DC Electrical Characteristics1 1 Input Mode Selection "SW_PAD_CTL_GRP_DDR_TYPE_RGMII"='10' (1.8V Mode) "SW_PAD_CTL_GRP_DDR_TYPE_RGMII"='11' (2.5V Mode). Parameters Symbol Test Conditions Min Max Unit High-level Output Voltage1 VOH Ioh= -0.1mA (DSE=001,010) Ioh= -1mA (DSE=011,100,101,110,111) OVDD-0.15 — V Low-level Output Voltage1 VOL Iol= 0.1mA (DSE=001,010) Iol= 1mA (DSE=011,100,101,110,111) —0.15 V Input Reference Voltage Vref —0.49 × OVDD 0.51 × OVDD V High-Level Input Voltage2 3 2 Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.6 V, and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must be controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device. 3 To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s. VIH —0.7 × OVDD OVDD V Low-Level Input Voltage2 3 VIL —0 0.3 × OVDD V Input Hysteresis (OVDD=1.8V) VHYS_HighVDD OVDD=1.8V 250 — mV Input Hysteresis (OVDD=2.5V) VHYS_HighVDD OVDD=2.5V 250 — mV Schmitt Trigger VT+3 4 4 Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled (register IOMUXC_SW_PAD_CTL_PAD_RGMII_TXC[HYS]= 0). VTH + —0.5 × OVDD — mV Schmitt Trigger VT-3 4 VTH - —— 0.5 × OVDD mV Pull-up Resistor (22 k Ω PU) RPU_22K Vin=0V — 212 μA Pull-up Resistor (22 k Ω PU) RPU_22K Vin=OVDD -— 1 μA Pull-up Resistor (47 k Ω PU) RPU_47K Vin=0V — 100 μA Pull-up Resistor (47 k Ω PU) RPU_47K Vin=OVDD — 1 μA Pull-up Resistor (100 k Ω PU) RPU_100K Vin=0V — 48 μA Pull-up Resistor (100 k Ω PU) RPU_100K Vin=OVDD — 1 μA Pull-down Resistor (100 k Ω PD) RPD_100K Vin=OVDD — 48 μA Pull-down Resistor (100 k Ω PD) RPD_100K Vin=0V — 1 μA Keeper Circuit Resistance Rkeep 105 165 k Ω Input Current (no pull-up/down) Iin VI = 0, VI = OVDD -2.9 2.9 μA |
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