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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TMS570LS1114 датащи(PDF) 75 Page - Texas Instruments |
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TMS570LS1114 датащи(HTML) 75 Page - Texas Instruments |
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75 / 169 page  TMS570LS1114 www.ti.com SPNS188B – OCTOBER 2012 – REVISED FEBRUARY 2015 6.10 Flash Memory 6.10.1 Flash Memory Configuration Flash Bank: A separate block of logic consisting of 1 to 16 sectors. Each flash bank normally has a customer-OTP and a TI-OTP area. These flash sectors share input/output buffers, data paths, sense amplifiers, and control logic. Flash Sector: A contiguous region of flash memory which must be erased simultaneously due to physical construction constraints. Flash Pump: A charge pump which generates all the voltages required for reading, programming, or erasing the flash banks. Flash Module: Interface circuitry required between the host CPU and the flash banks and pump module. Table 6-22. Flash Memory Banks and Sectors Memory Arrays (or Banks) Sector Segment Low Address High Address No. BANK0 (1MByte)(1) 0 16K Bytes 0x0000_0000 0x0000_3FFF 1 16K Bytes 0x0000_4000 0x0000_7FFF 2 16K Bytes 0x0000_8000 0x0000_BFFF 3 16K Bytes 0x0000_C000 0x0000_FFFF 4 16K Bytes 0x0001_0000 0x0001_3FFF 5 16K Bytes 0x0001_4000 0x0001_7FFF 6 32K Bytes 0x0001_8000 0x0001_FFFF 7 128K Bytes 0x0002_0000 0x0003_FFFF 8 128K Bytes 0x0004_0000 0x0005_FFFF 9 128K Bytes 0x0006_0000 0x0007_FFFF 10 128K Bytes 0x0008_0000 0x0009_FFFF 11 128K Bytes 0x000A_0000 0x000B_FFFF 12 128K Bytes 0x000C_0000 0x000D_FFFF 13 128K Bytes 0x000E_0000 0x000F_FFFF BANK7 (64KBytes) for EEPROM emulation(2)(3) 0 16K Bytes 0xF020_0000 0xF020_3FFF 1 16K Bytes 0xF020_4000 0xF020_7FFF 2 16K Bytes 0xF020_8000 0xF020_BFFF 3 16K Bytes 0xF020_C000 0xF020_FFFF (1) The Flash banks are 144-bit wide bank with ECC support. (2) The flash bank7 can be programmed while executing code from flash bank0. (3) Code execution is not allowed from flash bank7. 6.10.2 Main Features of Flash Module • Support for multiple flash banks for program and/or data storage • Simultaneous read access on a bank while performing program or erase operation on any other bank • Integrated state machines to automate flash erase and program operations • Pipelined mode operation to improve instruction access interface bandwidth • Support for Single Error Correction Double Error Detection (SECDED) block inside Cortex-R4F CPU – Error address is captured for host system debugging • Support for a rich set of diagnostic features Copyright © 2012–2015, Texas Instruments Incorporated System Information and Electrical Specifications 75 Submit Documentation Feedback Product Folder Links: TMS570LS1114 |
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