MPC8569E datasheet(47/127 Pages) FREESCALE

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DDR2 and DDR3 SDRAM Controller

MPC8569E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 1

Freescale Semiconductor

The following table provides the DDR controller interface capacitance for DDR2 and DDR3.

The following table provides the current draw characteristics for MVREFn.

Input high voltage

VIH

MVREFn + 0.100

GVDD

Input low voltage

VIL

GND

MVREFn – 0.100

I/O leakage current

IOZ

–50

μA6

Notes:

1. GVDD is expected to be within 50 mV of the DRAM’s voltage supply at all times. The DRAM’s and memory controller’s voltage

supply may or may not be from the same source.

2. MVREFn is expected to be equal to 0.5

× GV

DD and to track GVDD DC variations as measured at the receiver. Peak-to-peak

noise on MVREFn may not exceed the MVREFn DC level by more than ±1% of GVDD (that is, ± 15 mV).

3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made, and it is expected to be

equal to MVREFn with a min value of MVREFn – 0.04 and a max value of MVREFn +0.04. VTT should track variations in the

DC level of MVREFn.

4. The voltage regulator for MVREFn must meet the specifications stated in Table 16.

5. Input capacitance load for DQ, DQS, and DQS are available in the IBIS models.

6. Output leakage is measured with all outputs disabled, 0 V

≤ V

OUT ≤ GVDD.

Table 15. DDR2 and DDR3 SDRAM Capacitance

At recommended operating conditions with GVDD of 1.8 V ± 5% for DDR2 or 1.5 V ± 5% for DDR3

Parameter

Symbol

Min

Max

Unit

Notes

Input/output capacitance: DQ, DQS, DQS

CIO

1, 2

Delta input/output capacitance: DQ, DQS,

DQS

CDIO

—

0.5

1, 2

Note:

1. This parameter is sampled. GVDD = 1.8 V ± 0.1 V (for DDR2), f = 1 MHz, TA =25°C, VOUT = GVDD/2, VOUT

(peak-to-peak) = 0.2 V.

2. This parameter is sampled. GVDD = 1.5 V ± 0.075 V (for DDR3), f = 1 MHz, TA =25°C, VOUT = GVDD/2, VOUT

(peak-to-peak) = 0.175 V.

Table 16. Current Draw Characteristics for MVREFn

For recommended operating conditions, see Table 3.

Parameter

Symbol

Min

Max

Unit

Notes

Current draw for DDR2 SDRAM for MVREFn

IMVREFn

—

300

μA—

Current draw for DDR3 SDRAM for MVREFn

IMVREFn

—

250

μA—

Table 14. DDR3 SDRAM Interface DC Electrical Characteristics (continued)

At recommended operating condition with GVDD =1.5 V

Parameter

Symbol

Min

Max

Unit

Note

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