M68ICS08GR datasheet(162/408 Pages) FREESCALE

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Flash Memory

Technical Data

MC68HC908GR8 — Rev 4.0

162

Flash Memory

MOTOROLA

11.7 FLASH Program/Read Operation

Programming of the FLASH memory is done on a row basis. A row

consists of 32 consecutive bytes starting from addresses $XX00,

$XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, and $XXE0. Use this

step-by-step procedure to program a row of FLASH memory (Figure 11-

2 is a flowchart representation):

1. Set the PGM bit. This configures the memory for program

operation and enables the latching of address and data for

programming.

2. Read from the FLASH block protect register.

3. Write any data to any FLASH address within the row address

range desired.

4. Wait for a time, tnvs (min. 10µs).

5. Set the HVEN bit.

6. Wait for a time, tpgs (min. 5µs).

7. Write data to the FLASH address to be programmed.*

8. Wait for a time, tPROG (min. 30µs).

9. Repeat step 7 and 8 until all the bytes within the row are

programmed.

10. Clear the PGM bit.*

11. Wait for a time, tnvh (min. 5µs).

12. Clear the HVEN bit.

13. After time, trcv (min. 1µs), the memory can be accessed in read

mode again.

* The time between each FLASH address change, or the time between the last FLASH address

programmed to clearing PGM bit, must not exceed the maximum programming time, tPROG max.

This program sequence is repeated throughout the memory until all data

is programmed.

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