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M68ICS08GR датащи(PDF) 160 Page - Freescale Semiconductor, Inc |
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M68ICS08GR датащи(HTML) 160 Page - Freescale Semiconductor, Inc |
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160 / 408 page ![]() Flash Memory Technical Data MC68HC908GR8 — Rev 4.0 160 Flash Memory MOTOROLA PGM — Program Control Bit This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE bit such that both bits cannot be equal to 1 or set to 1 at the same time. 1 = Program operation selected 0 = Program operation unselected 11.5 FLASH Page Erase Operation Use this step-by-step procedure to erase a page (64 bytes) of FLASH memory to read as logic 1: 1. Set the ERASE bit, and clear the MASS bit in the FLASH control register. 2. Read the FLASH block protect register. 3. Write any data to any FLASH address within the page address range desired. 4. Wait for a time, tnvs (min. 10µs) 5. Set the HVEN bit. 6. Wait for a time, tErase (min. 1ms) 7. Clear the ERASE bit. 8. Wait for a time, tnvh (min. 5µs) 9. Clear the HVEN bit. 10. After a time, trcv (typ. 1µs), the memory can be accessed again in read mode. NOTE: While these operations must be performed in the order shown, other unrelated operations may occur between the steps. Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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