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M68ICS08GR датащи(PDF) 161 Page - Freescale Semiconductor, Inc |
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M68ICS08GR датащи(HTML) 161 Page - Freescale Semiconductor, Inc |
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161 / 408 page ![]() Flash Memory FLASH Mass Erase Operation MC68HC908GR8 — Rev 4.0 Technical Data MOTOROLA Flash Memory 161 11.6 FLASH Mass Erase Operation Use this step-by-step procedure to erase entire FLASH memory to read as logic 1: 1. Set both the ERASE bit, and the MASS bit in the FLASH control register. 2. Read from the FLASH block protect register. 3. Write any data to any FLASH address* within the FLASH memory address range. 4. Wait for a time, tnvs (min. 10µs) 5. Set the HVEN bit. 6. Wait for a time, tMErase (min. 4ms) 7. Clear the ERASE bit. 8. Wait for a time, tnvhl (min. 100µs) 9. Clear the HVEN bit. 10. After a time, trcv (min. 1µs), the memory can be accessed again in read mode. * When in Monitor mode, with security sequence failed Monitor ROM (MON), write to the FLASH block protect register instead of any FLASH address. NOTE: Programming and erasing of FLASH locations cannot be performed by code being executed from the FLASH memory. While these operations must be performed in the order shown, other unrelated operations may occur between the steps. Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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