H838532H datasheet(160/508 Pages) RENESAS

160 / 508 page

Section 6 ROM

Rev. 1.00 May 30, 2008 Page 140 of 484

REJ09B0436-0100

6.5.2

Erase/Erase-Verify

When erasing flash memory, the erase/erase-verify flowchart shown in figure 6.5 should be

followed.

1. Prewriting (setting erase block data to all 0s) is not necessary.

2. Erasing is performed in block units. Make only a single-bit specification in the erase block

3. The time during which the E bit is set to 1 is the flash memory erase time.

4. The watchdog timer (WDT) is set to prevent overerasing due to program runaway, etc. An

overflow cycle of approximately 19.8 ms is allowed.

5. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 1 bit

is b'0. Verify data can be read in word size from the address to which a dummy write was

performed.

6. If the read data is not erased successfully, set erase mode again, and repeat the erase/erase-

verify sequence as before. The maximum number of repetitions of the erase/erase-verify

sequence is 100.

6.5.3

Interrupt Handling when Programming/Erasing Flash Memory

All interrupts, are disabled while flash memory is being programmed or erased, or while the boot

program is executing, for the following three reasons:

1. Interrupt during programming/erasing may cause a violation of the programming or erasing

algorithm, with the result that normal operation cannot be assured.

2. If interrupt exception handling starts before the vector address is written or during

programming/erasing, a correct vector cannot be fetched and the CPU malfunctions.

3. If an interrupt occurs during boot program execution, normal boot mode sequence cannot be

carried out.

H838532H датащи(PDF) 160 Page - Renesas Technology Corp