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H838532H датащи(PDF) 150 Page - Renesas Technology Corp

номер детали H838532H
подробное описание детали  16-Bit Single-Chip Microcomputer H8 Family / H8/300H Super Low Power Series
PDF  508 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H838532H датащи(HTML) 150 Page - Renesas Technology Corp

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Section 6 ROM
Rev. 1.00 May 30, 2008 Page 130 of 484
REJ09B0436-0100
Bits 6 to 0—Reserved
These bits are always read as 0 and cannot be modified.
6.3.3
Erase Block Register (EBR)
Bit
Initial value
Read/Write
7
EB7
0
R/W
6
EB6
0
R/W
5
EB5
0
R/W
4
EB4
0
R/W
3
EB3
0
R/W
0
EB0
0
R/W
2
EB2
0
R/W
1
EB1
0
R/W
EBR specifies the flash memory erase area block. EBR is initialized to H'00 when the SWE bit in
FLMCR1 is 0. Do not set more than one bit at a time, as this will cause all the bits in EBR to be
automatically cleared to 0. When each bit is set to 1 in EBR, the corresponding block can be
erased. Other blocks change to the erase-protection state. See table 6.2 for the method of dividing
blocks of the flash memory. When the whole bits are to be erased, erase them in turn in unit of a
block.
Table 6.2
Division of Blocks to Be Erased
EBR
Bit Name
Block (Size)
Address
0
EB0
EB0 (1 Kbyte)
H'0000 to H'03FF
1
EB1
EB1 (1 Kbyte)
H'0400 to H'07FF
2
EB2
EB2 (1 Kbyte)
H'0800 to H'0BFF
3
EB3
EB3 (1 Kbyte)
H'0C00 to H'0FFF
4
EB4
EB4 (28 Kbytes)
H'1000 to H'7FFF
5
EB5
EB5 (16 Kbytes)
H'8000 to H'BFFF
6
EB6
EB6 (8 Kbytes)
H'C000 to H'DFFF
7
EB7
EB7 (4 Kbytes)
H'E000 to H'EFFF



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