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STM32H533CE датащи(PDF) 199 Page - STMicroelectronics

номер детали STM32H533CE
подробное описание детали  Arm® Cortex®-M33 32-bit MCUTrustZone® FPU, 375 DMIPS 250 MHz, 512-Kbyte flash, 272-Kbyte RAM, cryptography
PDF  231 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32H533CE датащи(HTML) 199 Page - STMicroelectronics

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DS14539 Rev 1
199/231
STM32H533xx
Electrical characteristics
200
JTAG/SWD interface characteristics
Unless otherwise specified, the parameters given in Table 118 and Table 119 for JTAG/SWD
are derived from tests performed under the ambient temperature, frcc_c_ck frequency and
VDD supply voltage summarized in Table 20, with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 10
Capacitive load CL= 30 pF
Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 5.3.14 for more details on the input/output characteristics:
Table 118. Dynamic JTAG characteristics(1)
1. Evaluated by characterization - Not tested in production.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
FTCK
TCK clock frequency
2.7 V < VDD < 3.6 V
-
-
47.5
MHz
1/tc(TCK)
1.71 V < VDD < 3.6 V
-
-
45
tisu(TMS)
TMS input setup time
-
3.5
-
-
ns
tih(TMS)
TMS input hold time
-
1.5
-
-
tisu(TDI)
TDI input setup time
-
2.5
-
-
tih(TDI)
TDI input hold time
-
1.5
-
-
tov(TDO)
TDO output valid time
2.7V < VDD < 3.6 V
-
8
10.5
1.71 < VDD < 3.6 V
-
8
11
toh(TDO)
TDO output hold time
-
6.5
-
-
Table 119. Dynamic SWD characteristics(1)
1. Evaluated by characterization - Not tested in production.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
FSWCLK
SWCLK clock frequency
2.7 V < VDD < 3.6 V
-
-
80
MHz
1/tc(SWCLK)
1.71 V < VDD < 3.6 V
-
-
71
tisu(SWDIO)
SWDIO input setup time
-
1.5
-
-
ns
tih(SWDIO)
SWDIO input hold time
-
1.5
-
-
tov(SWDIO)
SWDIO output valid time
2.7 V < VDD < 3.6 V
-
10.5
12.5
1.71 V < VDD < 3.6 V
-
10.5
14.0
toh(SWDIO)
SWDIO output hold time
-
8.5
-
-



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