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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32H533CE датащи(PDF) 195 Page - STMicroelectronics |
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STM32H533CE датащи(HTML) 195 Page - STMicroelectronics |
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195 / 231 page  DS14539 Rev 1 195/231 STM32H533xx Electrical characteristics 200 Figure 54. USB timings - definition of data signal rise and fall time 4. RL is the load connected on the USB full speed drivers. Table 113. USB startup time Symbol Parameter Max Unit tSTARTUP(1) 1. Specified by design - Not tested in production. USB transceiver startup time 1 μs ai14137b Cross over points Differential data lines VCRS VSS tf tr Table 114. USB electrical characteristics(1) Driver characteristics Symbol Parameter Conditions Min Max Unit trLS Rise time in LS(2) CL = 200 to 600 pF 75 300 ns tfLS Fall time in LS(2) CL = 200 to 600 pF 75 300 ns trfmLS Rise/fall time matching in LS tr/tf 80 125 % trFS Rise time in FS(2) CL = 50 pF 4 20 ns tfFS Fall time in FS(2) CL = 50 pF 4 20 ns trfmFS Rise/fall time matching in FS tr/tf 90 111 % VCRS Output signal crossover voltage (LS/FS) - 1.3 2.0 V ZDRV Output driver impedance(3) Driving high or low 28 44 Ω 1. Specified by design - Not tested in production. 2. Measured from 10% to 90% of the data signal. For more detailed information, refer to USB specification - chapter 7 (version 2.0). 3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching impedance is included in the embedded driver. Table 115. USB BCD DC electrical characteristics(1) Symbol Parameter Conditions Min Typ Max Unit IDD(USBBCD) Primary detection mode consumption - - - 300 μA Secondary detection mode consumption - - - 300 RDAT_LKG Data line leakage resistance - 300 - - kΩ VDAT_LKG Data line leakage voltage - 0.0 - 3.6 V |
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