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STM32H533CE датащи(PDF) 196 Page - STMicroelectronics |
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STM32H533CE датащи(HTML) 196 Page - STMicroelectronics |
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196 / 231 page ![]() Electrical characteristics STM32H533xx 196/231 DS14539 Rev 1 SD/SDIO MMC card host interface (SDMMC) characteristics Unless otherwise specified, the parameters given in Table 116 and Table 117 are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage summarized in Table 20, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 11 • Capacitive load CL= 30 pF • Measurement points are done at CMOS levels: 0.5 VDD • I/O compensation cell activated • HSLV activated when VDD ≤ 2.7 V Refer to Section 5.3.14 for more details on the input/output characteristics. RDCP_DAT Dedicated charging port resistance across D+/D- - - - 200 Ω VLGC_HI Logic high - 2.0 - 3.6 V VLGC_LOW Logic low - - - 0.8 VLGC Logic threshold - 0.8 - 2.0 VDAT_REF Data detect voltage - 0.25 - 0.4 VDP_SRC D+ source voltage - 0.5 - 0.7 VDM_SRC D- source voltage - 0.5 - 0.7 IDP_SINK D+ sink current - 25 - 175 μA IDM_SINK D- sink current - 25 - 175 1. Specified by design - Not tested in production. Table 116. Dynamic characteristics: SD/MMC characteristics, VDD = 2.7 to 3.6 V(1) Symbol Parameter Conditions Min Typ Max Unit fPP(2) Clock frequency in data transfer mode - - - 130/6 (3) MHz tW(CKL) Clock low time fPP =52MHz 8.5 9.5 - ns tW(CKH) Clock high time 8.5 9.5 - CMD, D inputs (referenced to CK) in eMMC legacy/SDR/DDR and SD HS/SDR(4)/DDR(4) mode tISU Input setup time HS - 3 - - ns tIH Input hold time HS - 1 - - tIDW(5) Input valid window (variable window) - 4.5 - - CMD, D outputs (referenced to CK) in eMMC legacy/SDR/DDR and SD HS/SDR(4)/DDR(4) mode tOV Output valid time HS - - 6.5 7/38(3) ns tOH Output hold time HS - 3.5 - - Table 115. USB BCD DC electrical characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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