FS5502 datasheet(69/113 Pages) NXP

69 / 113 page

NXP Semiconductors

FS5502

High voltage PMIC with multiple SMPS and LDO

16.4 BUCK3 electrical characteristics

TA = −40 °C to 125 °C, unless otherwise specified. VSUP = VSUP_UVH to 36 V, unless otherwise specified. All voltages referenced to ground.

Symbol

Parameter

Min

Typ

Max

Unit

VBUCK3_IN

Input voltage range

2.5

—

5.5

VBUCK3

Output voltage (OTP_VB3V[4:0] bits)

1.0 V, 1.1 V, 1.2 V, 1.25 V, 1.3 V, 1.35 V,

1.5 V, 1.6 V, 1.8 V, 2.3 V, 2.5 V, 2.8 V, 3.3 V

1.0

—

3.3

IBUCK3

DC output current capability

—

2.5

—

VBUCK3_ACC

Output voltage accuracy (Iout < 2.5 A)

−2

—

VBUCK3_SW

Switching frequency range

2.1

2.22

2.35

MHz

LBUCK3

Inductor for VBUCK3_SW = 2.22 MHz (OTP_VB3INDOPT[1:0] bits)

0.47

1.0

1.5

μH

Effective output capacitor

—

120

μF

COUT_BUCK3

Output decoupling capacitor

—

0.1

—

μF

Effective input capacitor (close to BUCK3_IN pin)

4.7

—

μF

CIN_BUCK3

Input decoupling capacitor (close to BUCK3_IN pin)

—

0.1

—

μF

VBUCK3_TLR

Transient load regulation (Cout = 44 μF, from 200 mA to 1.0 A, di/

dt = 2.0 A/μs)

−50

—

+50

2.0

2.6

3.1

ILIM_BUCK3

Inductor peak current limitation range (OTP_VB3SWILIM[1:0] bits)

3.6

4.5

5.45

TBUCK3_ON_MIN

HS minimum ON time

Ramp up and ramp down speed, OTP_DVS_BUCK3[1:0] = 00

7.81

10.42

13.02

mV/µs

Ramp up and ramp down speed, OTP_DVS_BUCK3[1:0] = 01

2.6

3.47

4.34

mV/µs

Ramp up and ramp down speed, OTP_DVS_BUCK3[1:0] = 10

1.95

2.6

3.26

mV/µs

VBUCK3_DVS_UP_DOWN

Ramp up and ramp down speed, OTP_DVS_BUCK3[1:0] = 11

1.56

2.08

2.60

mV/µs

TBUCK3_SOFT_START = VBUCK3 / VBUCK3_DVS_UP

Soft start for VBUCK3 = 1.1 V and OTP_DVS_BUCK3[1:0] = 00

84.8

105.6

140.08

μs

TBUCK3_SOFT_START

Soft start for VBUCK3 = 1.1 V and OTP_DVS_BUCK3[1:0] = 11

To be recalculated for different VBUCK3 and different

VBUCK3_DVS_UP_DOWN

422.4

528

704

μs

VBUCK3_STARTUP

Overshoot at startup

—

TBUCK3_DT

Dead time to avoid cross conduction

0.01

RBUCK3_HS_RON

HS PMOS RDSon

—

135

mΩ

RBUCK3_LS_RON

LS NMOS RDSon

—

mΩ

RBUCK3_DISCH

Discharge resistance (when BUCK3 is disabled)

250

500

1000

Ω

TSDBUCK3

Thermal shutdown threshold

160

—

°C

TSDBUCK3_HYST

Thermal shutdown threshold hysteresis

—

°C

TBUCK3_TSD

Thermal shutdown filtering time

μs

Table 65. BUCK3 electrical characteristics

16.5 BUCK3 efficiency

BUCK3 efficiency versus current load is given for information based on external

component criteria provided and VPRE voltage 4.1 V. If the conditions change, it has to

be recalculated with the FS5502_PDTCAL tool. The real efficiency has to be verified by

measurement at the application level.

FS5502

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 4 — 27 October 2021

69 / 113

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