FS5502 datasheet(64/113 Pages) NXP

64 / 113 page

NXP Semiconductors

FS5502

High voltage PMIC with multiple SMPS and LDO

TA = −40 °C to 125 °C, unless otherwise specified. VSUP = VSUP_UVH to 36 V, unless otherwise specified. All voltages referenced to ground.

Symbol

Parameter

Min

Typ

Max

Unit

VBUCK1_TLR

Transient load regulation for VBUCK1 >1.2 V

(Cout = 44 μF, from 200 mA to 1.0 A, di/dt = 2.0 A/μs)

(Cout = 44 μF, from 400 mA to 2.0 A, di/dt = 4.0 A/μs)

−3

—

ILIM_BUCK1

Inductor peak current limitation range for one phase (OTP_

VB1SWILIM[1:0])

3.6

4.5

5.45

Ramp up speed, OTP_DVS_BUCK1[1:0] = 00

5.86

7.81

9.77

mV/μs

Ramp up speed, OTP_DVS_BUCK1[1:0] = 01

2.34

3.13

3.91

mV/μs

Ramp up speed, OTP_DVS_BUCK1[1:0] = 10

1.95

2.60

3.26

mV/μs

VBUCK1_DVS_UP

(for VBUCK1 up to 1.5 V)

Ramp up speed, OTP_DVS_BUCK1[1:0] = 11

1.67

2.23

2.79

mV/μs

Ramp up speed, OTP_DVS_BUCK1[1:0] = 00

7.33

9.763

12.21

mV/μs

Ramp up speed, OTP_DVS_BUCK1[1:0] = 01

2.93

3.91

4.89

mV/μs

Ramp up speed, OTP_DVS_BUCK1[1:0] = 10

2.44

3.25

4.08

mV/μs

VBUCK1_DVS_UP

(for VBUCK1 = 1.8 V)

Ramp up speed, OTP_DVS_BUCK1[1:0] = 11

2.09

2.79

3.49

mV/μs

Ramp down speed, OTP_DVS_BUCK1[1:0] = 00

3.91

5.21

6.51

mV/μs

Ramp down speed, OTP_DVS_BUCK1[1:0] = 01

2.34

3.13

3.91

mV/μs

Ramp down speed, OTP_DVS_BUCK1[1:0] = 10

1.95

2.6

3.26

mV/μs

VBUCK1_DVS_DOWN

(for VBUCK1 up to 1.5 V)

Ramp down speed, OTP_DVS_BUCK1[1:0] = 11

1.67

2.23

2.79

mV/μs

Ramp down speed, OTP_DVS_BUCK1[1:0] = 00

4.89

6.51

8.14

mV/μs

Ramp down speed, OTP_DVS_BUCK1[1:0] = 01

2.93

3.91

4.89

mV/μs

Ramp down speed, OTP_DVS_BUCK1[1:0] = 10

2.44

3.25

4.08

mV/μs

VBUCK1_DVS_DOWN

(for VBUCK1 = 1.8 V)

Ramp down speed, OTP_DVS_BUCK1[1:0] = 11

2.09

2.79

3.49

mV/μs

TBUCK1_SOFT_START = VBUCK1 / VBUCK1_DVS_UP Soft start for VBUCK1

= 1.2 V and OTP_DVS_BUCK1[1:0] = 00

122.9

153.6

204.8

μs

TBUCK1_SOFT_START

Soft start for VBUCK1 = 1.2 V and OTP_DVS_BUCK1[1:0] = 11

To be recalculated for different VBUCK1 and different VBUCK1_DVS_UP

430.1

538.1

718.5

μs

VBUCK1_STARTUP

Overshoot at startup

—

TBUCK1_OFF_MIN

HS minimum OFF time

TBUCK1_DT

Dead time to avoid cross conduction

0.01

RBUCK1_HS_RON

HS PMOS RDSon

—

135

mΩ

RBUCK1_LS_RON

LS NMOS RDSon

—

mΩ

RBUCK1_DISch

Discharge resistance (when BUCK1 is disabled)

250

500

1000

Ω

TSDBUCK1

Thermal shutdown threshold

160

—

°C

TSDBUCK1_HYST

Thermal shutdown threshold hysteresis

—

°C

TBUCK1_TSD

Thermal shutdown filtering time

μs

Table 64. BUCK1 electrical characteristics...continued

15.5 BUCK1 efficiency

BUCK1 efficiency versus current load is given for information based on external

component criteria provided and VPRE voltage 4.1 V. If the conditions change, it has to

be recalculated with the VR5502_PDTCAL tool. The real efficiency has to be verified by

measurement at the application level.

FS5502

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 4 — 27 October 2021

64 / 113

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