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ATXP032 датащи(PDF) 34 Page - Dialog Semiconductor

номер детали ATXP032
подробное описание детали  EcoXiP??High Performance Low-Power Octal Flash
PDF  113 Pages
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ATXP032 датащи(HTML) 34 Page - Dialog Semiconductor

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ATXP032
DS-ATXP032–114I–4-2020
9.3
Buffer to Main Memory Page Program without Built-In Erase (88h)
The Buffer to Main Memory Page Program without Built-In Erase command allows data that is stored in the internal
buffer to be written into a pre-erased page in the main memory array. The data in the buffer will be data written by
the Buffer Write (84h) command or any data left in the buffer by the previous Byte Program or Page Program
command. It is necessary that the page in main memory to be written has been previously erased in order to avoid
programming errors. The Buffer to Main Memory Page Program without Built-In Erase command writes the full
256-byte page, even if less than 256 bytes were written to the buffer.
Before an 88h command can be started, the Write Enable command must have been previously issued to the
device (see “Write Enable (06h)” on page 42) to set the Write Enable Latch (WEL) bit of the Status/Control register
to a logic “1” state.
To perform a Buffer to Main Memory Page Program without Built-In Erase, the 88h command must be clocked into
the device followed by four address bytes comprised of 10 dummy bits, 14 page address bits (PA
13 - PA0) that
specify the page in the main memory to be written, and 8 dummy bits.
Or described differently: The four address bytes point to a byte within the page to be written, but the lower 8 bits A
7
- A
0 will be set to 0, so the page program starts at the beginning of the page boundary.
When a low-to-high transition occurs on the CS pin, the device programs the data stored in the buffer into the
specified page in the main memory. The page in main memory that is being programmed must have been
previously erased using one of the erase commands. The programming of the page is internally self-timed and
should take place in a maximum time of t
PP. During this time, the RDY/BUSY bit in the Status/Control register
indicates that the device is busy. At some point before the program cycle completes, the WEL bit in the
Status/Control Register is reset back to the logic “0” state.
In addition, if the memory is in the protected state, then the Buffer to Main Memory Page Program without Built-In
Erase Program command is not executed, and the device returns to the idle state once the CS pin has been
deasserted. The WEL bit in the Status/Control Register is reset back to the logic “0” state if the program cycle
aborts due to an incomplete address being sent, or because the memory location to be programmed is protected.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to
program properly. If a programming error arises, it is indicated by the EPE bit in the Status/Control register.
Figure 9-10. Buffer to Main Memory Page Program without Built-In Erase
SCK
CS
SI
SO
MSB
MSB
2
3
1
0
1
0
0
0
1
0
0
0
6
7
5
4
10 11
9
8
12
39
37 38
35 36
34
Opcode
A
A
A
A
A
A
A
A
A
A
A
A
Address Bits A31-A0
High-Impedance
DS



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