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PSD813F1 датащи(PDF) 94 Page - STMicroelectronics |
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PSD813F1 датащи(HTML) 94 Page - STMicroelectronics |
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94 / 110 page ![]() PSD813F1 94/110 Table 60. Flash Program, WRITE and Erase Times (3V devices) Note: 1. Programmed to all zero before erase. 2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading. Table 61. EEPROM WRITE Times (5V devices) Note: 1. If the maximum time has elapsed between successive WRITE cycles to an EEPROM page, the transfer of this data to EEPROM cells will begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type. 2. These specifications are for writing a page to EEPROM cells. Table 62. EEPROM WRITE Times (3V devices) Note: 1. If the maximum time has elapsed between successive WRITE cycles to an EEPROM page, the transfer of this data to EEPROM cells will begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type. 2. These specifications are for writing a page to EEPROM cells. Symbol Parameter Min. Typ. Max. Unit Flash Program 8.5 s Flash Bulk Erase1 (pre-programmed) 330 s Flash Bulk Erase (not pre-programmed) 10 s tWHQV3 Sector Erase (pre-programmed) 1 30 s tWHQV2 Sector Erase (not pre-programmed) 2.2 s tWHQV1 Byte Program 14 1200 µs Program / Erase Cycles (per Sector) 100,000 cycles tWHWLO Sector Erase Time-Out 100 µs tQ7VQV DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)2 30 ns Symbol Parameter Min Typ Max Unit tEEHWL Write Protect After Power Up 5 ms tBLC EEPROM Byte Load Cycle Timing (Note 1) 0.2 120 µs tWCB EEPROM Byte Write Cycle Time 4 10 ms tWCP EEPROM Page Write Cycle Time (Note 2) 630 ms Program/Erase Cycles (Per Sector) 10,000 cycles Symbol Parameter Min Typ Max Unit tEEHWL Write Protect After Power Up 5 ms tBLC EEPROM Byte Load Cycle Timing (Note 1) 0.2 120 µs tWCB EEPROM Byte Write Cycle Time 4 10 ms tWCP EEPROM Page Write Cycle Time (Note 2) 630 ms Program/Erase Cycles (Per Sector) 10,000 cycles |
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