PSD813F1 datasheet(93/110 Pages) STMICROELECTRONICS

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PSD813F1

Table 58. WRITE Timing (3V devices)

Note: 1. Any input used to select an internal PSD function.

2. In multiplexed mode, latched address generated from ADIO delay to address output on any port.

3. WR has the same timing as E, LDS, UDS, WRL, and WRH signals.

4. Assuming data is stable before active WRITE signal.

5. Assuming WRITE is active before data becomes valid.

6. TWHAX2 is the address hold time for DPLD inputs that are used to generate Sector Select signals for internal PSD memory.

Table 59. Flash Program, WRITE and Erase Times (5V devices)

Note: 1. Programmed to all zero before erase.

2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading.

Symbol

Parameter

Conditions

-15

-20

Unit

MinMax

tLVLX

ALE or AS Pulse Width

tAVLX

Address Setup Time

(Note 1)

tLXAX

Address Hold Time

(Note 1)

tAVWL

Address Valid to Leading

Edge of WR

(Notes 1,3)

tSLWL

CS Valid to Leading Edge of WR

(Note 3)

tDVWH

WR Data Setup Time

(Note 3)

tWHDX

WR Data Hold Time

(Note 3)

810

tWLWH

WR Pulse Width

(Note 3)

tWHAX1

Trailing Edge of WR to Address Invalid

(Note 3)

tWHAX2

Trailing Edge of WR to DPLD Address Invalid

(Note 3,6)

tWHPV

Trailing Edge of WR to Port Output

Valid Using I/O Port Data Register

(Note 3)

tDVMV

Data Valid to Port Output Valid

Using Macrocell Register Preset/Clear

(Notes 3,5)

100

tAVPV

Address Input Valid to Address

Output Delay

(Note 2)

tWLMV

WR Valid to Port Output Valid Using

Macrocell Register Preset/Clear

(Notes 3,4)

100

Symbol

Parameter

Min.

Typ.

Max.

Unit

Flash Program

8.5

Flash Bulk Erase1 (pre-programmed)

330

Flash Bulk Erase (not pre-programmed)

tWHQV3

Sector Erase (pre-programmed)

tWHQV2

Sector Erase (not pre-programmed)

2.2

tWHQV1

Byte Program

1200

µs

Program / Erase Cycles (per Sector)

100,000

cycles

tWHWLO

Sector Erase Time-Out

100

µs

tQ7VQV

DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)2

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