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JS28F256P30B95A датащи(PDF) 72 Page - Micron Technology

номер детали JS28F256P30B95A
подробное описание детали  Numonyx StrataFlash Embedded Memory
PDF  97 Pages
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производитель  MICRON [Micron Technology]
домашняя страница  http://www.micron.com
Logo MICRON - Micron Technology

JS28F256P30B95A датащи(HTML) 72 Page - Micron Technology

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P30
Datasheet
August 2008
72
306666-12
Table 41: System Interface Information
Offset
Length
Description
Add.
Hex
Code
Value
1Bh
1
1B:
--17
1.7V
1Ch
1
1C:
--20
2.0V
1Dh
1
1D:
--85
8.5V
1Eh
1
1E:
--95
9.5V
1Fh
1
“n” such that typical single word program time-out = 2n μ-sec
1F:
--08
256μs
20h
1
“n” such that typical max. buffer write time-out = 2n μ-sec
20:
--09
512μs
21h
1
“n” such that typical block erase time-out = 2n m-sec
21:
--0A
1s
22h
1
“n” such that typical full chip erase time-out = 2n m-sec
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2n times typical 23:
--01
512μs
24h
1
“n” such that maximum buffer write time-out = 2n times typical
24:
--01 1024μs
25h
1
“n” such that maximum block erase time-out = 2n times typical
25:
--02
4s
26h
1
“n” such that maximum chip erase time-out = 2n times typical
26:
--00
NA
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts



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