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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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JS28F256P30B95A датащи(PDF) 56 Page - Micron Technology |
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JS28F256P30B95A датащи(HTML) 56 Page - Micron Technology |
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56 / 97 page  P30 Datasheet August 2008 56 306666-12 15.2 Capacitance 15.3 AC Read Specifications Table 29: Capacitance Parameter Signals Min Typ Max Unit Condition Notes Input Capacitance Address, Data, CE#, WE#, OE#, RST#, CLK, ADV#, WP# 26 7 pF Typ temp = 25 °C, Max temp = 85 °C, VCC = (0 V - 2.0 V), VCCQ = (0 V - 3.6 V), Discrete silicon die 1,2,3 Output Capacitance Data, WAIT 2 4 5 pF Notes: 1. Capacitance values are for a single die; for 2-die and 4-die stacks, multiply the capacitance values by the number of dies in the stack. 2. Sampled, but not 100% tested. 3. Silicon die capacitance only; add 1 pF for discrete packages. Table 30: AC Read Specifications for 64/128- Mbit Densities (Sheet 1 of 2) Num Symbol Parameter Min Max Unit Notes Asynchronous Specifications R1 tAVAV Read cycle time 85 - ns R2 t AVQV Address to output valid - 85 ns R3 tELQV CE# low to output valid - 85 ns R4 tGLQV OE# low to output valid - 25 ns 1,2 R5 tPHQV RST# high to output valid - 150 ns 1 R6 tELQX CE# low to output in low-Z 0 - ns 1,3 R7 tGLQX OE# low to output in low-Z 0 - ns 1,2,3 R8 tEHQZ CE# high to output in high-Z - 24 ns 1,3 R9 tGHQZ OE# high to output in high-Z - 24 ns R10 tOH Output hold from first occurring address, CE#, or OE# change 0- ns R11 tEHEL CE# pulse width high 20 - ns 1 R12 tELTV CE# low to WAIT valid - 17 ns R13 tEHTZ CE# high to WAIT high-Z - 20 ns 1,3 R15 tGLTV OE# low to WAIT valid - 17 ns 1 R16 tGLTX OE# low to WAIT in low-Z 0 - ns 1,3 R17 tGHTZ OE# high to WAIT in high-Z - 20 ns Latching Specifications R101 tAVVH Address setup to ADV# high 10 - ns 1 R102 tELVH CE# low to ADV# high 10 - ns R103 tVLQV ADV# low to output valid - 85 ns R104 tVLVH ADV# pulse width low 10 - ns R105 tVHVL ADV# pulse width high 10 - ns R106 tVHAX Address hold from ADV# high 9 - ns 1,4 |
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