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MPF0900AMMA2ES датащи(PDF) 100 Page - NXP Semiconductors |
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MPF0900AMMA2ES датащи(HTML) 100 Page - NXP Semiconductors |
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100 / 205 page ![]() NXP Semiconductors PF09 Nine-channel power management IC with advanced system safety monitoring All parameters are specified at TA = -40 °C to 125 °C, VSW1IN = VIN = UVDET to 5.5 V, VSW1FB = 3.3 V, ISW1 = 1 A, typical external component values, fSW = 2.5 MHz, unless otherwise noted. Typical values are characterized at VSW1IN = 5.0 V, VSW1FB = 3.3 V, ISW1 = 1000 mA, and Ta = 25 °C, unless otherwise noted. Symbol Description Min Typ Max Unit ηSW1_PWM4 PWM efficiency at 40 % load • VSW1IN = 5.0 V • VSW1FB = 0.8 V • fSW1 = 2.5 MHz • TA = 25 °C – 81.5 – % tDB_SW1 Dead-band time – 3 5 ns tLXSR1_SW1 Switching node slew time – 2.5 – ns VLOTR1_SW1 Transient load regulation (single phase) • 0.5 V ≤ VSW1FB ≤ 1.35 V • ISTEP = 200 mA to 1.0 A, di/dt = 2.0 A/μs • fSW = 2.5 MHz , COUT = 44 μF, LOUT = 0.47 μH • VIN = 5.0 V -25 – 25 mV VLOTR2_SW1 Transient load regulation (single phase) • 1.5 V ≤ VSW1FB ≤ 3.3 V • ISTEP = 200 mA to 1.0 A, di/dt = 2.0 A/μs • fSW = 2.5 MHz, COUT = 44 μF, LOUT = 0.47 μH • VIN = 5.0 V -3 – 3 % tPFM2PWM_SW1 PFM to PWM transition time 10 – 50 µs IQPFM_SW1 SW1 regulator quiescent current • PFM mode output not switching • Max IQ at TA = 85 °C – 15 20 µA RDS25_SW1HS High-side FET RDSON [2] • TJ = 25 °C • Including bond-wire and package resistance – 46 – mΩ RDS125_SW1HS High-side FET RDSON[2] • TJ = 125 °C • Including bond-wire and package resistance – 60 – mΩ RDS25_SW1LS Low-side FET RDSON [3] • TJ = 25 °C • Including bond-wire and package resistance – 27 – mΩ RDS125_SW1LS Low-side FET RDSON [3] • TJ = 125 °C • Including bond-wire and package resistance – 35 – mΩ RDIS_SW1 Discharge resistance • Regulator disabled and ramp completed 20 60 100 Ω VSW1IN_LS Operating input range in load switch mode – 3.3 3.5 V ILIM_LS_SW1 Load switch current limit 3.6 – 5.4 A TON_LS_SW1 Load switch turn-on time – – 2000 µs tOCP_LS_SW1 Load switch OCP deglitch time 500 – – µs Table 124. SW1 electrical characteristics...continued [1] UVDET represents the minimum functional level for the PF09; VSW1IN must meet the minimum headroom to ensure proper output voltage regulation. PF09 All information provided in this document is subject to legal disclaimers. © 2026 NXP B.V. All rights reserved. Product data sheet Rev. 1.3 — 16 December 2025 Document feedback 100 / 205 |
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