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LPC55S2X датащи(PDF) 76 Page - NXP Semiconductors

номер детали LPC55S2X
подробное описание детали  32-bit Arm Cortex®-M33 microcontroller
PDF  132 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
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NXP Semiconductors
LPC55S2x/LPC552x
32-bit Arm Cortex®-M33 microcontroller
Tamb = -40 °C to +105 °C, unless otherwise specified. VBAT_PMU = VBAT_DCDC = VDD = 3.0 V
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
CCLK = 96 MHz, PLL disabled
[3]
-
2.7
-
mA
Table 18. Static characteristics: Power consumption in sleep mode...continued
[1]
Typical ratings are not guaranteed. Typical values listed are at room temperature (25 °C).
[2]
Typical ratings are not guaranteed. Typical values listed are at room temperature (25 °C). Characterized through bench measurements using typical
samples.
[3]
Clock source FRO. PLL disabled
Tamb = -40 °C to +105 °C; unless otherwise specified. IDD is total current from VBAT_DCDC, VBAT_PMU, VDDA, and VDD
supply domains. VSUPPLY = VBAT_DCDC + VBAT_PMU + VDDA + VDD
Symbol Parameter
Conditions
Min
Typ[1]
Max[2]
Unit
IDD
supply current
Deep-sleep mode; all SRAM on
Tamb = 25 °C, VSUPPLY = 3.0 v
[3]
-
110
135
μA
Tamb = 25 °C, VSUPPLY = 1.8 v
[3] -
148
191
μA
Tamb = 105 °C, VSUPPLY = 1.8 v
[3] -
-
1850
μA
Power-down mode.
[3]
SRAM_X2 (4 KB) powered
Tamb = 25 °C, VSUPPLY = 3.0 v
-
3.9
4.5
μA
SRAM_X2 (4 KB) powered
Tamb = 105 °C, VSUPPLY = 3.0 v
-
-
85
μA
SRAM_X2 and SRAM_X3 (8 KB) powered
Tamb = 25 °C, VSUPPLY = 3.0 v
-
4.0
-
μA
256 KB full retention
Tamb = 25 °C, VSUPPLY = 3.0 v
-
14
18
μA
256 KB full retention
Tamb = 105 °C, VSUPPLY = 3.0 v
-
-
480
μA
SRAM_X2 (4 KB) powered
Tamb = 25 °C, VSUPPLY = 3.0 v
USART3 enabled as wake-up source
-
4.2
-
μA
SRAM_X2 (4 KB) powered
Tamb = 25 °C, VSUPPLY = 3.0 v
OSTIMER enabled as wake-up source
-
4.1
-
μA
Deep power-down mode;
RTC oscillator input grounded (RTC
oscillator disabled, 4 KB SRAM powered)
Tamb = 25 °C, VSUPPLY= 3.0 v
[3]
-
590
750
nA
Deep power-down mode;
RTC oscillator input grounded (RTC
oscillator disabled, 4 KB SRAM powered)
Tamb = 105 °C, VSUPPLY= 3.0 v
[3]
-
-
15
μA
RTC oscillator running with external crystal
(4 KB SRAM powered)
-
790
-
nA
Table 19. Static characteristics: Power consumption in deep-sleep, power-down, and deep power-down
modes
LPC55S2X_LPC552X
All information provided in this document is subject to legal disclaimers.
© 2024 NXP B.V. All rights reserved.
Data sheet
Rev. 2.3 — 29 August 2024
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