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DSP56366P датащи(PDF) 55 Page - Freescale Semiconductor, Inc |
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DSP56366P датащи(HTML) 55 Page - Freescale Semiconductor, Inc |
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55 / 110 page ![]() DSP56366 Technical Data, Rev. 3.1 Freescale Semiconductor 3-29 193 RD deassertion to data not valid4 tGZ 0.0 0.0 — 0.0 — ns 194 WR assertion to data active 0.75 × T C − 0.3 11.1 — 9.1 — ns 195 WR deassertion to data high impedance 0.25 × T C —3.8 —3.1 ns 1 The number of wait states for out-of-page access is specified in the DCR. 2 The refresh period is specified in the DCR. 3 RD deassertion will always occur after CAS deassertion; therefore, the restricted timing is t OFF and not tGZ. 4 The asynchronous delays specified in the expressions are valid for DSP56366. 5 Either t RCH or tRRH must be satisfied for read cycles. Table 3-15 DRAM Out-of-Page and Refresh Timings, Eleven Wait States1, 2 No. Characteristics3 Symbol Expression4 Min Max Unit 157 Random read or write cycle time tRC 12 × T C 120.0 — ns 158 RAS assertion to data valid (read) tRAC 6.25 × T C − 7.0 — 55.5 ns 159 CAS assertion to data valid (read) tCAC 3.75 × T C − 7.0 — 30.5 ns 160 Column address valid to data valid (read) tAA 4.5 × T C − 7.0 — 38.0 ns 161 CAS deassertion to data not valid (read hold time) tOFF 0.0 — ns 162 RAS deassertion to RAS assertion tRP 4.25 × T C − 4.0 38.5 — ns 163 RAS assertion pulse width tRAS 7.75 × T C − 4.0 73.5 — ns 164 CAS assertion to RAS deassertion tRSH 5.25 × T C − 4.0 48.5 — ns 165 RAS assertion to CAS deassertion tCSH 6.25 × T C − 4.0 58.5 — ns 166 CAS assertion pulse width tCAS 3.75 × T C − 4.0 33.5 — ns 167 RAS assertion to CAS assertion tRCD 2.5 × T C ± 4.0 21.0 29.0 ns 168 RAS assertion to column address valid tRAD 1.75 × T C ± 4.0 13.5 21.5 ns 169 CAS deassertion to RAS assertion tCRP 5.75 × T C − 4.0 53.5 — ns 170 CAS deassertion pulse width tCP 4.25 × T C − 4.0 38.5 — ns 171 Row address valid to RAS assertion tASR 4.25 × T C − 4.0 38.5 — ns 172 RAS assertion to row address not valid tRAH 1.75 × T C − 4.0 13.5 — ns 173 Column address valid to CAS assertion tASC 0.75 × T C − 4.0 3.5 — ns Table 3-14 DRAM Out-of-Page and Refresh Timings, Eight Wait States1, 2 (continued) No. Characteristics3 Symbol Expression4 66 MHz 80 MHz Unit Min Max Min Max |
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