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PSD4235G2V-10UI датащи(PDF) 93 Page - STMicroelectronics |
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PSD4235G2V-10UI датащи(HTML) 93 Page - STMicroelectronics |
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93 / 100 page ![]() 93/100 PSD4256G6V This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Table 69. Port F Peripheral Data Mode WRITE Timing Note: 1. RD has the same timing as DS, LDS, UDS, and PSEN (in 8031 combined mode). 2. WR has the same timing as the E, LDS, UDS, WRL, and WRH signals. 3. Any input used to select Port F Data Peripheral mode. 4. Data is already stable on Port F. 5. Data stable on ADIO pins to data on Port F. Table 70. Power-down Timing Table 71. Reset (RESET) Timing Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles. 2. Warm RESET aborts Flash memory Program or Erase cycles, and puts the device in READ Mode. Figure 48. Reset (RESET) Timing Diagram Table 72. VSTBYON Timing Note: 1. VSTBYON timing is measured at VCC ramp rate of 2ms. Symbol Parameter Conditions -10 Unit Min Max tWLQV–PF WR to Data Propagation Delay (Note 2) 40 ns tDVQV–PF Data to Port A Data Propagation Delay (Note 5) 35 ns tWHQZ–PF WR Invalid to Port A Tri-state (Note 2) 33 ns Symbol Parameter Conditions -10 Unit Min Max tLVDV ALE Access Time from Power-down 128 ns tCLWH Maximum Delay from APD Enable to Internal PDN Valid Signal Using CLKIN (PD1) 15 * tCLCL 1 µs Symbol Parameter Conditions Min Max Unit tNLNH RESET Active Low Time 1 300 ns tNLNH–PO Power-on RESET Active Low Time 1 ms tNLNH–A Warm RESET Active Low Time 2 25 µs tOPR RESET High to Operational Device 300 ns Symbol Parameter Conditions Min Typ Max Unit tBVBH VSTBY Detection to VSTBYON Output High (Note 1) 20 µs tBXBL VSTBY Off Detection to VSTBYON Output Low (Note 1) 20 µs tNLNH-PO tOPR AI02866b RESET tNLNH tNLNH-A tOPR VCC V CC(min) Power-On Reset Warm Reset |
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