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DP83907 датащи(PDF) 65 Page - National Semiconductor (TI) |
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DP83907 датащи(HTML) 65 Page - National Semiconductor (TI) |
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65 / 70 page ![]() Preliminary Switching Design Guidelines (Continued) ISA SLAVE ACCESSES (Continued) Symbol Description 8-Bit Transfers 16-Bit Transfers Units Min Max Min Max T27 SA0–19 Valid to BPCS Asserted (Note 11) 55 55 ns T28a MRD Asserted to MSRD Asserted 60 60 ns T28b MWR Asserted to MSWR Asserted 120 120 ns T30 SA0–19 Invalid to BPCS Negated (Note 11) 0 ns T31 SMRD Deasserted to MSRD Deasserted 0 ns T33 MSWR Deasserted to MSD0–7 Invalid (Note 3) 0 ns T35 BPCS Asserted to CHRDY Asserted (Note 13) 175 ns T36 MSRD Asserted to CHRDY Asserted (Note 13) 150 ns T38 MSD0-7 Asserted to CHRDY Asserted (Note 13) 250 ns Note 1 M16 IO16 are only asserted for 16-bit transfers Note 2 CHRDY is only deasserted if the NIC core can not service the access immediately It is held deasserted until the NIC core is ready causing the system to insert wait states Note 3 On 8-bit transfers only 8 bits of MSD0–15 and D0–7 are driven Note 5 This is the standard CHRDY timing where CHRDY is asserted after IORD or IOWR Note 6 Read data valid is referenced to CHRDY when wait states have been inserted Note 7 If no wait states are inserted read data valid can be measured from IORD Note 8 This is a minimum timing with no additional wait states Note 9 This is the standard IO16 timing where IO16 is asserted after a valid address decode Note 10 This is the late IO16 timing required by some machines where IO16 is asserted after a valid address decode and IORD or IOWR going active Note 11 This is a timing for a RAM access Note 13 This is a timing for a Boot PROM access Note 14 Guaranteed by design SERIAL EEPROM TIMING TLF12082 – 46 Symbol Description Min Max Units T1 EECS Setup to MSD2 150 ns T2 EECS Hold after MSD2 250 ns T3 MSD2 Low Time 450 ns T4 MSD2 High Time 450 ns T5 MSD2 Clock Period (Note 1) 1 m s T6 MSD1 Setup to MSD2 High 100 ns T7 MSD2 Hold from MSD2 High 100 ns T8 MSD0 Valid from MSD2 High 500 ns Note 1 Derived from crystal oscillator tolerance e g 001% 65 |
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