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AN4192 датащи(PDF) 41 Page - STMicroelectronics

номер детали AN4192
подробное описание детали  In the latest generation of CPUs for modern desktop and notebook platforms
PDF  47 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4192 датащи(HTML) 41 Page - STMicroelectronics

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AN4192
Low-side FET selection
Doc ID 023820 Rev 1
41/47
Figure 51.
RG,HS(EXT) = 2.2 Ω - RG,HS(EXT) = 1.8 Ω/ RSNUB = 1 Ω waveforms @ 20 A
Therefore, the last configuration is the best in terms of phase node ringing smoothing (12%,
from 33.6 V to 29. 6 V, see Figure 52).
The increased LS gate resistor value (1.8
Ω) doesn't negatively effect the LS gate-source
bouncing and the potential shoot-through risks: this spurious voltage is higher than VTH,min
(1 V) for only 1.7 ns; it is not enough to charge the MOSFET input capacitance and turn-on
of the device itself.
Figure 52.
Phase node improvement
AM16494V1
AM16495V1



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