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AN4192 датащи(PDF) 37 Page - STMicroelectronics

номер детали AN4192
подробное описание детали  In the latest generation of CPUs for modern desktop and notebook platforms
PDF  47 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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AN4192 датащи(HTML) 37 Page - STMicroelectronics

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AN4192
Low-side FET selection
Doc ID 023820 Rev 1
37/47
3.5
RC snubber network settings
In high frequency converters, designers must choose the right electric topology and device
in order to minimize the switching noise. In particular, when the HS turns on, the LS body
diode that was delivering the whole load current must be in the HOLD state. Due to the body
diode reverse recovery process and stray inductances, an overshoot may appear on the
phase node voltage, affecting the MOSFET reliability. Furthermore, the positive and
negative spikes on the phase node waveforms are also dangerous for other electronic
components surrounding the LS FET.
The simplest way to reduce these switching oscillations is by connecting an RC snubber
network across the LS FET. Theoretically, a simple capacitive snubber would be useful to
smooth the switching noise; but, a series resistance is added to decrease the current
amplitude during the capacitor discharging and to dissipate the energy at turn-off (when an
overvoltage event occurs).
Figure 46.
LS FET with RC snubber network
The right RSNUB and CSNUB selection depends on several factors: overshoot reduction,
damping effect and energy losses in the snubber circuit:
Typically, the snubber resistor is equal to the characteristic impedance of the freely
oscillating circuit L-C:
Equation 8
where Lstray includes the PCB and package inductances. Its value can be extrapolated by
the phase node waveform, measuring the ringing oscillation fRING (Figure 47) and using (9):
AM16489V1
E
1
2
---
V
SNUB
DD
2
⋅⋅
=
R
SNUB
L
stray
C
oss
---------------
=



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