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AN4192 датащи(PDF) 25 Page - STMicroelectronics |
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AN4192 датащи(HTML) 25 Page - STMicroelectronics |
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25 / 47 page ![]() AN4192 Low-side FET selection Doc ID 023820 Rev 1 25/47 removed, the voltage drop across the LS diode becomes equal to the steady-state reverse biased value and, after its turn-on, the HS FET provides all the load current. Figure 26. Single-phase synchronous buck converter Figure 27. Reverse recovery charge waveforms The “reverse recovery” charge process causes power dissipation, which depends on the charge amount to be recovered (Qrr), the switching frequency and the converter input voltage: Equation 5 In standard technical literature, the “reverse recovery losses” are added to the HS losses: in fact, as previously explained, during the reverse recovery process, the LS body diode transfers energy to the HS FET, which, in other words, must provide not only the load current but also the diode reverse recovery current. The body-drain diode optimization plays a crucial role not only for the efficiency improvement but also for the LS switching performance. In fact, reducing Qrr (the excess charge stored during deadtime), the LS body diode transfers less energy (smaller reverse AM16470V1 AM16471V1 P rr Q rr V in f SW ⋅⋅ = |
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