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SH7014 датащи(PDF) 19 Page - Renesas Technology Corp |
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SH7014 датащи(HTML) 19 Page - Renesas Technology Corp |
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19 / 754 page ![]() Rev.5.00 Sep. 27, 2007 Page xix of xxxiv REJ09B0398-0500 Item Page Revision (See Manual for Details) 18.7.3 Erase Mode 517 Description added When erasing flash memory, the erase/erase-verify flowchart shown in figure 18.14 should be followed. To perform data or program erasure, set the 1 bit flash memory area to be erased in erase block register 1 (EBR1) at least 10 µs after setting the SWE bit to 1 in flash memory control register 1 (FLMCR1). 18.8.2 Software Protection 525 Description amended Software protection can be implemented by setting the SWE bit in FLMCR1, erase block register 1 (EBR1) and the RAMS bit in the RAM emulation register (RAMER). 18.11.4 Auto-Program Mode 538 Description amended 3. The lower 8 bits of the transfer address must be H'00, H'80. If a value other than an effective address is input, processing will switch to a memory write operation but a write error will be flagged. 4. Memory address transfer is performed in the second cycle (figure 18.24). Do not perform transfer after the third cycle. 18.11.6 Status Read Mode Table 18.19 Status Read Mode Return Commands 543 Note amended Note: I/O2 and I/O3 are undefined at present. 22.3.3 Bus Timing Table 22.7 Bus Timing 567 Description amended and notes added Conditions: V CC = 5.0 V ± 10%, AVCC = 5.0 V ±10%, AVCC = VCC ±10%, V SS = AVSS = 0 V, Ta = – 20 to +75°C Notes: TPC is the set value of the TPC bit in DCR. * The delay time Min values are reference values (typ).) 22.3.4 Direct Memory Access Controller Timing Table 22.8 Direct Memory Access Controller Timing 579 Description amended Conditions: V CC = 5.0 V ± 10%, AVCC = 5.0 V ± 10%, AVCC = VCC ±10%, V SS = AVSS = 0 V, Ta = – 20 to +75°C |
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