DM505LRBABF datasheet(103/295 Pages) TI2

103 / 295 page

vddshv1, vddshv2, vddshv3,

vddshv4, vddshv5, vddshv6

vdds18v

Vdelta

(Note1)

SPRS916_ELCH_03

103

DM505

www.ti.com

SPRS976E – NOVEMBER 2016 – REVISED MAY 2018

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Specifications

–

If DDR2 memory is used (requiring 1.8V supply),

–

then vdds_ddr[1-3] can be combined with vdds18v and vdds18v_ddr[1-3] domains and sourced from a common supply.

Accordingly, all domains can ramp down concurrently with vdds18v.

–

if vdds_ddr[1-3] and vdds18v_ddr[1-3] are combined but kept separate from vdds18v, then the combined 1.8V DDR supply can

ramp down before or concurrently with vdds18v.

(10) vdda_* domains:

–

can ramp down before, concurrently or after vdds_ddr[1-3], there is no dependency between these supplies.

–

can ramp down before or concurrently with vdds18v.

–

must satisfy the vdds18v versus vdda_* discharge relationship (see Figure 5-8) if any of the vdda_* disable point is later or

discharge rate is slower than vdds18v.

(11) vdds18v domain:

–

should maintain VOPR MIN (VNOM -5% = 1.71 V) until all other supplies start to ramp down.

–

must satisfy the vdds18v versus vddshv[1-6] discharge relationship (see Figure 5-6) if any of the vddshv[1-6] is operating at 3.3 V.

–

must satisfy the vdds18v versus vdds_ddr[1-3] discharge relationship ( see Figure 5-7) if vdds_ddr[1-3] discharge rate is slower than

vdds18v.

Figure 5-6 describes vddshv[1-6] supplies falling before vdds18v supplies delta.

Figure 5-6. vdds18v versus vddshv[1-6] Discharge Relationship

(1) Vdelta MAX = 2V

DM505LRBABF датащи(PDF) 103 Page - Texas Instruments