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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DM505LRBABF датащи(PDF) 92 Page - Texas Instruments |
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DM505LRBABF датащи(HTML) 92 Page - Texas Instruments |
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92 / 295 page  92 DM505 SPRS976E – NOVEMBER 2016 – REVISED MAY 2018 www.ti.com Submit Documentation Feedback Specifications Copyright © 2016–2018, Texas Instruments Incorporated Table 5-7. Dual Voltage LVCMOS I2C DC Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER MIN NOM MAX UNIT Balls ABF: L3, L4, L6, L5; I2C Standard Mode – 1.8 V VIH Input high-level threshold 0.7×VDDS V VIL Input low-level threshold 0.3×VDDS V Vhys Hysteresis 0.1×VDDS V II Input current at each I/O pin with an input voltage between 0.1×VDDS to 0.9×VDDS 12 µA IOZ IOZ(IPAD Current) at each IO pin. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 12 µA CI Input capacitance 10 pF VOL3 Output low-level threshold open-drain at 3-mA sink current 0.2×VDDS V IOLmin Low-level output current @VOL=0.2×VDDS 3 mA tOF Output fall time from VIHmin to VILmax with a bus capacitance CB from 5 pF to 400 pF 250 ns I2C Fast Mode – 1.8 V VIH Input high-level threshold 0.7×VDDS V VIL Input low-level threshold 0.3×VDDS V Vhys Hysteresis 0.1×VDDS V II Input current at each I/O pin with an input voltage between 0.1×VDDS to 0.9×VDDS 12 µA IOZ IOZ(IPAD Current) at each IO pin. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 12 µA CI Input capacitance 10 pF VOL3 Output low-level threshold open-drain at 3-mA sink current 0.2×VDDS V IOLmin Low-level output current @VOL=0.2×VDDS 3 mA tOF Output fall time from VIHmin to VILmax with a bus capacitance CB from 10 pF to 400 pF 20+0.1×C b 250 ns I2C Standard Mode – 3.3 V VIH Input high-level threshold 0.7×VDDS V VIL Input low-level threshold 0.3×VDDS V Vhys Hysteresis 0.05×VDD S V II Input current at each I/O pin with an input voltage between 0.1×VDDS to 0.9×VDDS 31 80 µA IOZ IOZ(IPAD Current) at each IO pin. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 31 80 µA CI Input capacitance 10 pF VOL3 Output low-level threshold open-drain at 3-mA sink current 0.4 V IOLmin Low-level output current @VOL=0.4V 3 mA IOLmin Low-level output current @VOL=0.6V for full drive load (400pF/400KHz) 6 mA tOF Output fall time from VIHmin to VILmax with a bus capacitance CB from 5 pF to 400 pF 250 ns I2C Fast Mode – 3.3 V VIH Input high-level threshold 0.7×VDDS V VIL Input low-level threshold 0.3×VDDS V Vhys Hysteresis 0.05×VDD S V II Input current at each I/O pin with an input voltage between 0.1×VDDS to 0.9×VDDS 31 80 µA |
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