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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32H533CE датащи(PDF) 107 Page - STMicroelectronics |
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STM32H533CE датащи(HTML) 107 Page - STMicroelectronics |
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107 / 231 page  DS14539 Rev 1 107/231 STM32H533xx Electrical characteristics 200 Table 27. Typical and maximum current consumption in Run mode, code with data processing running from flash memory, 2-way instruction cache ON, PREFETCH ON Symbol Parameter Conditions fHCLK (MHz) Typ Max(1) Unit TJ = 25°C TJ = 85°C TJ = 105°C TJ = 130°C IDD(Run) Supply current in Run mode All peripherals disabled VOS0 250 30.8 33 57 70 - mA 215 26.7 29 50 63 - 200 24.5 26 47 59 - VOS1 200 21.3 23 40 49 65 180 19.5 21 37 46 62 168 18.1 19 34 44 60 150 16.2 18 31 40 57 VOS2 150 14.8 16 28 36 49 100 10.3 11 21 28 42 VOS3 100 9.5 10 19 25 36 60 6.1 7 14 19 31 25 3.1 4 9 14 25 All peripherals enabled VOS0 250 66.5 69 87 101 - 215 57.4 60 76 90 - 200 53.3 56 71 84 - VOS1 200 46.5 49 61 72 86 180 42.3 44 56 66 81 150 35.1 37 47 57 72 VOS2 150 32.2 34 43 51 63 100 22.0 23 30 37 49 VOS3 100 20.1 21 27 33 47 60 12.7 14 18 23 36 25 6.0 7 11 15 27 1. Evaluated by characterization - Not tested in production. |
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