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STM32H533CE датащи(PDF) 106 Page - STMicroelectronics

номер детали STM32H533CE
подробное описание детали  Arm® Cortex®-M33 32-bit MCUTrustZone® FPU, 375 DMIPS 250 MHz, 512-Kbyte flash, 272-Kbyte RAM, cryptography
PDF  231 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32H533CE датащи(HTML) 106 Page - STMicroelectronics

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Electrical characteristics
STM32H533xx
106/231
DS14539 Rev 1
5.3.6
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
All the run-mode current consumption measurements given in this section are performed
with a CoreMark code.
Typical and maximum current consumption
The MCU is placed under the following conditions:
All I/O pins are in analog input mode.
All peripherals are disabled except when explicitly mentioned.
The flash memory access time is adjusted with the minimum wait-state number,
depending on the fHCLK frequency (refer to the tables “FLASH recommended number
of wait states and programming delay” available in the reference manual).
When the peripherals are enabled, the AHB clock frequency is the CPU frequency and
the APB clock frequency is AHB frequency.
The parameters given in the following tables are derived from tests performed under supply
voltage conditions summarized in Table 20, and, unless otherwise specified, at ambient
temperature.
The maximum current consumption is given for LDO regulator ON and VDD = 3.6 V. The
typical current consumption is given for VDD = 3V at ambient temperature.
VREFINT_DIV1(3) 1/4 reference voltage
-
-25-
%VREFINT
VREFINT_DIV2(3) 1/2 reference voltage
-
50
-
VREFINT_DIV3(3) 3/4 reference voltage
-
75
-
1. VREFINT does not take into account package and soldering effects.
2. The shortest sampling time for the application can be determined by multiple iterations.
3. Specified by design - Not tested in production.
Table 25. Embedded reference voltage (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 26. Internal reference voltage calibration value
Symbol
Parameter
Memory address
VREFINT_CAL
Raw data acquired at 30 °C, VDDA = 3.3 V
0x08FF F810 - 0x08FF F811



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