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STM32H533CE датащи(PDF) 104 Page - STMicroelectronics |
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STM32H533CE датащи(HTML) 104 Page - STMicroelectronics |
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104 / 231 page ![]() Electrical characteristics STM32H533xx 104/231 DS14539 Rev 1 5.3.4 Embedded reset and power control block characteristics The parameters given in Table 24 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 20. Table 24. Embedded reset and power control block characteristics(1) Symbol Parameter Conditions Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 detection VDD rising - 377 550 μs VPOR/PDR Power-on/down reset threshold (BORH_EN =0) Rising edge 1.62 1.67 1.71 V Falling edge 1.58 1.62 1.68 VBOR1 Brownout reset threshold 1 (BORH_EN =1) Rising edge 2.04 2.10 2.15 V Falling edge 1.95 2.00 2.06 VBOR2 Brownout reset threshold 2 (BORH_EN =1) Rising edge 2.34 2.41 2.47 Falling edge 2.25 2.31 2.37 VBOR3 Brownout reset threshold 3 (BORH_EN =1) Rising edge 2.63 2.70 2.78 Falling edge 2.54 2.61 2.68 VPVD0 PVD threshold 0 Rising edge 1.90 1.96 2.01 V Falling edge 1.81 1.86 1.91 VPVD1 PVD threshold 1 Rising edge 2.05 2.10 2.16 Falling edge 1.96 2.01 2.06 VPVD2 PVD threshold 2 Rising edge 2.19 2.26 2.32 Falling edge 2.10 2.15 2.21 VPVD3 PVD threshold 3 Rising edge 2.35 2.41 2.47 Falling edge 2.25 2.31 2.37 VPVD4 PVD threshold 4 Rising edge 2.49 2.56 2.62 Falling edge 2.39 2.45 2.51 VPVD5 PVD threshold 5 Rising edge 2.64 2.71 2.78 Falling edge 2.55 2.61 2.68 VPVD6 PVD threshold 6 Rising edge 2.78 2.86 2.94 Falling edge 2.69 2.76 2.83 VPOR/PDR Hysteresis for power-on/down reset Hysteresis in Run mode - 43 - mV Vhyst_BOR_PVD Hysteresis voltage of BOR (unless BORH_EN = 0) and PVD -- 100 - IDD_BOR_PVD(2) BOR and PVD consumption from VDD - - - 0.630 µA IDD_POR_PDR POR and PDR consumption from VDD -0.8 - 1.2 |
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