SPC563M60L7 datasheet(95/128 Pages) STMICROELECTRONICS

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SPC563M64x, SPC563M60x

Electrical characteristics

127

4.14

Flash memory electrical characteristics

Maximum Frequency includes FM modulation.

APC must be equal to RWSC.

Table 32. Program and erase specifications

Symbol

Parameter

Min

Value

Typical

Value(1)

Initial

Max(2)

Max(3)

Unit

Tdwprogram

Double Word (64 bits) Program Time(4)

—22

500

s

T16kpperase

16 KB Block Pre-program and Erase Time

—

300

500

5000

T32kpperase

32 KB Block Pre-program and Erase Time

—

400

600

5000

T64kpperase

64 KB Block Pre-program and Erase Time

—

600

900

5000

T128kpperase

128 KB Block Pre-program and Erase Time

—

800

1300

7500

Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change

pending device characterization.

Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.

The maximum program & erase times occur after the specified number of program/erase cycles. These maximum values

are characterized but not guaranteed.

Actual hardware programming times. This does not include software overhead.

Table 33. Flash module life

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

P/E

Number of program/erase cycles per block

for 16 Kbyte blocks over the operating

temperature range (TJ)

—

100,000

—

cycles

P/E

Number of program/erase cycles per block

for 32 and 64 Kbyte blocks over operating

temperature range (TJ)

—

10,000

—

cycles

P/E

Number of program/erase cycles per block

for 128 Kbyte blocks over the operating

temperature range (TJ)

—

1,000

—

cycles

Retention

Minimum data retention at 85 °C average

ambient temperature(1)

Blocks with 0 – 1,000

P/E cycles

—

years

Blocks with 10,000 P/E

cycles

—

years

Blocks with 100,000 P/E

cycles

—

years

Ambient temperature averaged over duration of application, not to exceed recommended product operating temperature

range.

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