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SPC563M60L7 датащи(PDF) 74 Page - STMicroelectronics |
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SPC563M60L7 датащи(HTML) 74 Page - STMicroelectronics |
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74 / 128 page ![]() Electrical characteristics SPC563M64x, SPC563M60x 74/128 DocID14642 Rev 12 4.4 Electromagnetic Interference (EMI) characteristics 4.5 Electromagnetic static discharge (ESD) characteristics Table 12. EMI testing specifications(1) Symbol Parameter Conditions fOSC/fBUS Frequency Level (Typ) Unit Radiated Emissions VEME Device Configuration, test conditions and EM testing per standard IEC61967-2; Supply Voltage = 5.0V DC, Ambient Temperature = 25 °C, Worst-case Orientation Oscillator Frequency = 8 MHz; System Bus Frequency = 80 MHz; No PLL Frequency Modulation 150 kHz – 50 MHz 26 dB V 50–150 MHz 24 150–500 MHz 24 500–1000 MHz 21 IEC Level K — Oscillator Frequency = 8 MHz; System Bus Frequency = 80 MHz; 1% PLL Frequency Modulation 150 kHz – 50 MHz 20 dB V 50–150 MHz 19 150–500 MHz 14 500–1000 MHz 7 IEC Level L — 1. IEC Classification Level: L = 24 dBµV; K = 30 dBµV. Table 13. ESD ratings(1),(2) Symbol Parameter Conditions Value Unit — SR ESD for Human Body Model (HBM) — 2000 V R1 SR HBM circuit description —1500 C SR — 100 pF —SR ESD for field induced charge Model (FCDM) All pins 500 V Corner pins 750 — SR Number of pulses per pin Positive pulses (HBM) 1 — Negative pulses (HBM) 1 — — SR Number of pulses — 1 — 1. All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2. Device failure is defined as: “If after exposure to ESD pulses, the device does not meet the device specification requirements, which includes the complete DC parametric and functional testing at room temperature and hot temperature.” |
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