поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

NAND04GA3C2A датащи(PDF) 38 Page - STMicroelectronics

номер детали NAND04GA3C2A
подробное описание детали  4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
PDF  51 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND04GA3C2A датащи(HTML) 38 Page - STMicroelectronics

Back Button NAND04GA3C2A Datasheet HTML 34Page - STMicroelectronics NAND04GA3C2A Datasheet HTML 35Page - STMicroelectronics NAND04GA3C2A Datasheet HTML 36Page - STMicroelectronics NAND04GA3C2A Datasheet HTML 37Page - STMicroelectronics NAND04GA3C2A Datasheet HTML 38Page - STMicroelectronics NAND04GA3C2A Datasheet HTML 39Page - STMicroelectronics NAND04GA3C2A Datasheet HTML 40Page - STMicroelectronics NAND04GA3C2A Datasheet HTML 41Page - STMicroelectronics NAND04GA3C2A Datasheet HTML 42Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 38 / 51 page
background image
12 DC and AC parameters
NAND04GA3C2A, NAND04GW3C2A
38/51
Table 20.
AC Characteristics for Operations, VDDQ 3V Devices
(1)
Symbol
Alt.
Symbol
Parameter
3V I/O
Unit
tALLRL1
tAR
Address Latch Low to
Read Enable Low
Read Electronic Signature
Min
20
ns
tALLRL2
Read cycle
Min
20
ns
tBHRL
tRR
Ready/Busy High to Read Enable Low
Min
20
ns
tBLBH1
Ready/Busy Low to
Ready/Busy High
Read Busy time
Max
60
µs
tBLBH2
tPROG
Program Busy time
Max
2000
µs
tBLBH3
tBERS
Erase Busy time
Max
3
ms
tBLBH4
Reset Busy time, during ready
Max
5
µs
tWHBH1
tRST
Write Enable High to
Ready/Busy High
Reset Busy time, during read
Max
20
µs
Reset Busy time, during program
Max
40
µs
Reset Busy time, during erase
Max
200
µs
tCLLRL
tCLR
Command Latch Low to Read Enable Low
Min
15
ns
tDZRL
tIR
Data Hi-Z to Read Enable Low
Min
0
ns
tEHQZ
tCHZ
Chip Enable High to Output Hi-Z
Max
30
ns
tELQV
tCEA
Chip Enable Low to Output Valid
Max
50
ns
tRHRL
tREH
Read Enable High to
Read Enable Low
Read Enable High Hold time
Min
20
ns
tRHQZ
tRHZ
Read Enable High to Output Hi-Z
Max
30
ns
tRLRH
tRP
Read Enable Low to
Read Enable High
Read Enable Pulse Width
Min
40
ns
tRLRL
tRC
Read Enable Low to
Read Enable Low
Read Cycle time
Min
60
ns
tRLQV
tREA
Read Enable Low to
Output Valid
Read Enable Access time
Max
45
ns
Read ES Access time(2)
tWHBH
tR
Write Enable High to
Ready/Busy High
Read Busy time
Max
60
µs
tWHBL
tWB
Write Enable High to Ready/Busy Low
Max
100
ns
tWHRL
tWHR
Write Enable High to Read Enable Low
Min
80
ns
tVHWH
(3)
tWW
Write Protection time
Min
100
ns
tVLWH
(3)
Min
100
ns
1.
AC Characteristics for VDDQ 1.8V devices are still to be determined.
2.
ES = Electronic Signature.
3.
WP High to W High during Program/Erase Enable operations.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com