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NAND04GA3C2A датащи(PDF) 37 Page - STMicroelectronics

номер детали NAND04GA3C2A
подробное описание детали  4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
PDF  51 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND04GA3C2A датащи(HTML) 37 Page - STMicroelectronics

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NAND04GA3C2A, NAND04GW3C2A
12 DC and AC parameters
37/51
Table 19.
AC Characteristics for Command, Address, Data Input, VDDQ 3V Devices
(1)
Symbol
Alt. Symbol
Parameter
3V I/O
Unit
tALLWH
tALS
Address Latch Low to Write Enable High
AL Setup time
Min
40
ns
tALHWH
Address Latch High to Write Enable High
tCLHWH
tCLS
Command Latch High to Write Enable High
CL Setup time
Min
20
ns
tCLLWH
Command Latch Low to Write Enable High
tDVWH
tDS
Data Valid to Write Enable High
Data Setup time
Min
20
ns
tELWH
tCS
Chip Enable Low to Write Enable High
E Setup time
Min
30
ns
tWHALH
tALH
Write Enable High to Address Latch High
AL Hold time
Min
15
ns
tWHALL
Write Enable High to Address Latch Low
tWHCLH
tCLH
Write Enable High to Command Latch High
CL hold time
Min
10
ns
tWHCLL
Write Enable High to Command Latch Low
tWHDX
tDH
Write Enable High to Data Transition
Data Hold time
Min
15
ns
tWHEH
tCH
Write Enable High to Chip Enable High
E Hold time
Min
10
ns
tWHWL
tWH
Write Enable High to Write Enable Low
W High Hold
time
Min
20
ns
tWLWH
tWP
Write Enable Low to Write Enable High
W Pulse Width
Min
40
ns
tWLWL
tWC
Write Enable Low to Write Enable Low
Write Cycle time
Min
60
ns
1.
AC Characteristics for VDDQ 1.8V devices are still to be determined.



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