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NAND04GA3C2A датащи(PDF) 35 Page - STMicroelectronics

номер детали NAND04GA3C2A
подробное описание детали  4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
PDF  51 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND04GA3C2A датащи(HTML) 35 Page - STMicroelectronics

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NAND04GA3C2A, NAND04GW3C2A
12 DC and AC parameters
35/51
12
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 16: Operating and AC Measurement Conditions. Designers should check that the
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
The DC and AC characteristics for VDDQ 1.8V devices are not yet available.
Table 16.
Operating and AC Measurement Conditions
Parameter
NAND04GA3C2A,
NAND04GW3C2A
Units
Min
Max
Supply Voltage (VDD)
1.8V, VDDQ devices
1.7
1.95
V
3V, VDDQ devices
2.7
3.6
V
Ambient Temperature (TA)
Grade 1
0
70
°C
Grade 6
–40
85
°C
Load Capacitance (CL) (1 TTL GATE and CL)
1.8V VDDQ devices
30
pF
3V, VDDQ devices (2.7 - 3.6V)
50
pF
Input Pulses Voltages
1.8V, VDDQ devices
0VDD
V
3V, VDDQ devices
0.4
2.4
V
Input and Output Timing Ref. Voltages
1.8V, VDDQ devices
0.9
V
3V, VDDQ devices
1.5
V
Output Circuit Resistor Rref
8.35
k
Ω
Input Rise and Fall Times
5
ns
Table 17.
Capacitance(1)
Symbol
Parameter
Test Condition
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0V
10
pF
CI/O
Input/Output Capacitance
VIL = 0V
10
pF
1.
TA = 25°C, f = 1 MHz. CIN and CI/O are not 100% tested.



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