NAND04GA3C2A datasheet(14/51 Pages) STMICROELECTRONICS

номер детали	NAND04GA3C2A

подробное описание детали	4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

PDF	51 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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3 Signal Descriptions

NAND04GA3C2A, NAND04GW3C2A

14/51

3.7

Write Protect (WP)

The Write Protect pin is an input that gives a hardware protection against unwanted program

or erase operations. When Write Protect is Low, VIL, the device does not accept any

program or erase operations.

It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.

3.8

Ready/Busy (RB)

The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R

Controller is currently active.

When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the

operation completes Ready/Busy goes High, VOH.

The use of an open-drain output allows the Ready/Busy pins from several memories to be

connected to a single pull-up resistor. A Low will then indicate that one, or more, of the

memories is busy.

Refer to the Section 12.1: Ready/busy signal electrical characteristics for details on how to

calculate the value of the pull-up resistor.

3.9

VDD supply voltage

VDD provides the power supply to the internal core of the memory device. It is the main

power supply for operations (read, program and erase).

3.10

VSS ground

Ground, VSS, is the reference for the power supply. It must be connected to the system

ground.

3.11

VSSQ

VSSQ is the ground reference for the I/O power supply. It must be connected to the system

ground.

3.12

VDDQ

VDDQ provides power to the I/O buffers.

NAND04GA3C2A датащи(PDF) 14 Page - STMicroelectronics