NAND04GA3C2A datasheet(18/51 Pages) STMICROELECTRONICS

номер детали	NAND04GA3C2A

подробное описание детали	4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

PDF	51 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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6 Device operations

NAND04GA3C2A, NAND04GW3C2A

18/51

Device operations

The following section gives the details of the device operations.

6.1

Read memory array

At Power-Up the device defaults to Read mode. To enter Read mode from another mode the

Read command must be issued, see Table 8: Commands. Once a Read command is

issued, subsequent consecutive Read commands only require the confirm command code

(30h).

Once a Read command is issued two types of operations are available: Random Read and

Page Read.

6.2

Random Read

Each time the Read command is issued the first read is Random Read.

6.3

Page read

After the first Random Read access, the page data (2112 Bytes) is transferred to the Page

Buffer in a time of tWHBH (refer to Table 20 for value). Once the transfer is complete the

Ready/Busy signal goes High. The data can then be read out sequentially (from selected

column address to last column address) by pulsing the Read Enable signal.

The device can output random data in a page, instead of the consecutive sequential data, by

issuing a Random Data Output command.

The Random Data Output command can be used to skip some data during a sequential

data output.

The sequential operation can be resumed by changing the column address of the next data

to be output, to the address which follows the Random Data Output command.

The Random Data Output command can be issued as many times as required within a

page.

The Random Data Output command is not accepted during Cache Read operations.

NAND04GA3C2A датащи(PDF) 18 Page - STMicroelectronics