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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NAND04GA3C2A датащи(PDF) 34 Page - STMicroelectronics |
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NAND04GA3C2A датащи(HTML) 34 Page - STMicroelectronics |
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34 / 51 page  11 Maximum rating NAND04GA3C2A, NAND04GW3C2A 34/51 11 Maximum rating Stressing the device above the ratings listed in Table 15: Absolute Maximum Ratings, may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 15. Absolute Maximum Ratings Symbol Parameter Value Unit Min Max TBIAS Temperature Under Bias – 50 125 °C TSTG Storage Temperature – 65 150 °C VIO (1) Input or Output Voltage 1.8V, VDDQ devices – 0.6 2.7 V 3 V, VDDQ devices – 0.6 4.6 V VDD Supply Voltage – 0.6 4.6 V 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins. |
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