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NAND02G-B2C датащи(PDF) 45 Page - STMicroelectronics

номер детали NAND02G-B2C
подробное описание детали  1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF  62 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND02G-B2C датащи(HTML) 45 Page - STMicroelectronics

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NAND01G-B2B, NAND02G-B2C
DC And AC parameters
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Table 24.
AC Characteristics for Command, Address, Data Input
Symbol
Alt.
Symbol
Parameter
1.8V
Devices
3V
Devices
Unit
tALLWH
tALS
Address Latch Low to Write Enable High
AL Setup time
Min
25
15
ns
tALHWH
Address Latch High to Write Enable High
tCLHWH
tCLS
Command Latch High to Write Enable
High
CL Setup time
Min
25
15
ns
tCLLWH
Command Latch Low to Write Enable
High
tDVWH
tDS
Data Valid to Write Enable High
Data Setup time
Min
20
15
ns
tELWH
tCS
Chip Enable Low to Write Enable High
E Setup time
Min
35
20
ns
tWHALH
tALH
Write Enable High to Address Latch High
AL Hold time
Min
10
5
ns
tWHALL
Write Enable High to Address Latch Low
AL Hold time
Min
tWHCLH
tCLH
Write Enable High to Command Latch
High
CL hold time
Min
10
5
ns
tWHCLL
Write Enable High to Command Latch
Low
tWHDX
tDH
Write Enable High to Data Transition
Data Hold time
Min
10
5
ns
tWHEH
tCH
Write Enable High to Chip Enable High
E Hold time
Min
10
5
ns
tWHWL
tWH
Write Enable High to Write Enable Low
W High Hold
time
Min
15
10
ns
tWLWH
tWP
Write Enable Low to Write Enable High
W Pulse Width
Min
25
15
ns
tWLWL
tWC
Write Enable Low to Write Enable Low
Write Cycle time
Min
45
30
ns



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