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NAND02G-B2C датащи(PDF) 54 Page - STMicroelectronics

номер детали NAND02G-B2C
подробное описание детали  1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF  62 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND02G-B2C датащи(HTML) 54 Page - STMicroelectronics

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DC And AC parameters
NAND01G-B2B, NAND02G-B2C
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Figure 29.
Program/Erase Enable waveform
Figure 30.
Program/Erase Disable waveform
11.1
Ready/Busy Signal electrical characteristics
Figure 32, Figure 31 and Figure 33 show the electrical characteristics for the Ready/Busy
signal. The value required for the resistor RP can be calculated using the following equation:
So,
where IL is the sum of the input currents of all the devices tied to the Ready/Busy signal. RP
max is determined by the maximum value of tr.
W
RB
tVHWH
ai12477
WP
I/O
80h
10h
W
RB
tVLWH
ai12478
WP
I/O
80h
10h
High
R
P
min
VDDmax VOLmax
–
()
IOL
IL
+
-------------------------------------------------------------
=
R
P
min 1.8V
()
1.85V
3mA
IL
+
---------------------------
=
R
P
min 3V
()
3.2V
8mA
IL
+
---------------------------
=



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