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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NAND02G-B2C датащи(PDF) 43 Page - STMicroelectronics |
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NAND02G-B2C датащи(HTML) 43 Page - STMicroelectronics |
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43 / 62 page  NAND01G-B2B, NAND02G-B2C DC And AC parameters 43/62 Figure 18. Equivalent Testing Circuit for AC Characteristics Measurement Table 22. DC Characteristics, 1.8V Devices Symbol Parameter Test Conditions Min Typ Max Unit IDD1 Operating Current Sequential Read tRLRL minimum E=VIL, IOUT = 0 mA -8 15 mA IDD2 Program - - 8 15 mA IDD3 Erase - - 8 15 mA IDD5 Standby Current (CMOS)(1) E=VDD-0.2, WP=0/VDD - 10 50 µA ILI Input Leakage Current(1) VIN= 0 to VDDmax - - ±10 µA ILO Output Leakage Current(1) VOUT= 0 to VDDmax - - ±10 µA VIH Input High Voltage - VDD-0.4 - VDD+0.3 V VIL Input Low Voltage - -0.3 - 0.4 V VOH Output High Voltage Level IOH = -100µA VDD-0.1 - - V VOL Output Low Voltage Level IOL = 100µA - - 0.1 V IOL (RB) Output Low Current (RB) VOL = 0.1V 3 4 mA VLKO VDD Supply Voltage (Erase and Program lockout) - - - 1.1 V 1. Leakage current and standby current double in stacked devices Ai11085 NAND Flash CL 2Rref VDD 2Rref GND GND |
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