NAND02G-B2C datasheet(33/62 Pages) STMICROELECTRONICS

номер детали	NAND02G-B2C

подробное описание детали	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

PDF	62 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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33 / 62 page

NAND01G-B2B, NAND02G-B2C

Device operations

33/62

6.9

Read Electronic Signature

The device contains a Manufacturer Code and Device Code. To read these codes three steps

are required:

one Bus Write cycle to issue the Read Electronic Signature command (90h)

one Bus Write cycle to input the address (00h)

four Bus Read Cycles to sequentially output the data (as shown in Table 14: Electronic

Signature).

Table 14.

Electronic Signature

Part Number

Byte/Word 1

Byte/Word 2

Byte/Word 3

(see Table 15)

Byte/Word 4

(see Table 16)

Manufacturer

Code

Device code

NAND01GR3B2B

20h

A1h

80h

15h

NAND01GW3B2B

F1h

1Dh

NAND01GR4B2B

0020h

B1h

55h

NAND01GW4B2B

C1h

5Dh

NAND02GR3B2C

20h

AAh

15h

NAND02GW3B2C

DAh

1Dh

NAND02GR4B2C

0020h

BAh

55h

NAND02GW42C

CAh

5Dh

Table 15.

Electronic Signature Byte 3

I/O

Definition

Value

Description

I/O1-I/O0

Internal Chip number

0 0

0 1

1 0

1 1

I/O3-I/O2

Cell Type

0 0

0 1

1 0

1 1

2-level cell

4-level cell

8-level cell

16-level cell

I/O5-I/O4

Number of simultaneously

programmed pages

0 0

0 1

1 0

1 1

I/O6

Interleaved Programming

between multiple devices

Not supported

Supported

I/O7

Cache Program

Not supported

Supported

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