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SPC56EL70L3 датащи(PDF) 14 Page - STMicroelectronics |
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SPC56EL70L3 датащи(HTML) 14 Page - STMicroelectronics |
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14 / 128 page ![]() Introduction SPC56EL70L3, SPC56EL70L5,PC564L70L3, SPC564L70L5 14/128 DocID023953 Rev 5 The eDMA module provides the following features: 16 channels supporting 8-, 16-, and 32-bit value single or block transfers Support variable sized queues and circular buffered queue Source and destination address registers independently configured to post-increment or stay constant Support major and minor loop offset Support minor and major loop done signals DMA task initiated either by hardware requestor or by software Each DMA task can optionally generate an interrupt at completion and retirement of the task Signal to indicate closure of last minor loop Transfer control descriptors mapped inside the SRAM The eDMA controller is replicated for each processing channel. 1.5.5 On-chip flash memory with ECC This device includes programmable, non-volatile flash memory. The non-volatile memory (NVM) can be used for instruction storage or data storage, or both. The flash memory module interfaces with the system bus through a dedicated flash memory array controller. It supports a 64-bit data bus width at the system bus port, and a 128-bit read data interface to flash memory. The module contains four 128-bit prefetch buffers. Prefetch buffer hits allow no-wait responses. Buffer misses incur a 3 wait state response at 120 MHz. The flash memory module provides the following features: 2 MB of flash memory in unique multi-partitioned hard macro Sectorization: – Partition 1 (low address): 16 KB + 16 KB + 16 KB + 16 KB – Partition 2 (low address): 16 KB + 16 KB + 16 KB + 16 KB – Partition 3 (low address): 64 KB + 64 KB – Partition 4 (mid address): 128 KB + 128 KB – Partition 5 (high address): 256 KB + 256 KB – Partition 6 (high address): 256 KB + 256 KB – Partition 7 (high address): 256 KB + 256 KB EEPROM emulation (in software) within same module but on different partition 16 KB test sector and 16 KB shadow sector for test, censorship device and user option bits Wait states: – Access time less or equal to 3 WS at 120 MHz + 4% FM (4-1-2-1 access) – Access time less or equal to 2 WS at 80 MHz + 4% FM Flash memory line 128-bit wide with 8-bit ECC on 64-bit word (total 144 bits) Accessed via a 64-bit wide bus for write and a 128-bit wide array for read operations 1-bit error correction, 2-bit error detection 1.5.6 On-chip SRAM with ECC The SPC56XL70 SRAM provides a general-purpose single port memory. |
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