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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DS89C430 датащи(PDF) 20 Page - Dallas Semiconductor |
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DS89C430 датащи(HTML) 20 Page - Dallas Semiconductor |
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20 / 48 page  DS89C430/DS89C440/DS89C450 Ultra-High-Speed Flash Microcontrollers 20 of 48 Figure 6. Memory Map (as shown for the DS89C430) External Data Memory 8K x 8 Flash Memory (Program) 1K x 8 SRAM Data OR prog mem addr from 400 - 7FF 128 Bytes Indirect Addressing Bit Addressable Bank 3 Bank 2 Bank 1 Bank 0 00 1F 20 2F 7F 80 128 Bytes SFR FF 0000 1FFF 2000 3FFF INTERNAL MEMORY 03FF 0000 FFFF FFFF 4000 0000 0000 03FF External Program Memory INTERNAL REGISTERS 8K x 8 Flash Memory (Program) Memory Configuration As illustrated in Figure 6, the DS89C430 incorporates two 8kB flash areas for on-chip program memory and 1kB of SRAM for on-chip data memory or a particular range (400–7FF) of “alternate” program memory space. The DS89C440 incorporates two 16kB flash memories and the DS89C450 incorporates two 32kB flash memories. The DS89C430 uses an address scheme that separates program memory from data memory such that the 16-bit address bus can address each memory area up to maximum of 64kB. |
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